Journal:IEEE Journal of the Electron Devices Society

Key Words:Breakdown voltage, device optimization, gallium nitride (GaN), specific ON-resistance, vertical merged pn-Schottky (MPS) diode

Abstract:In this paper, we systematically investigate the impact of the key structural parameters on the reverse and forward characteristics of gallium nitride (GaN) based vertical merged pn-Schottky (MPS) diode by numerical simulation. In comparison with conventional GaN-based vertical Schottky barrier diode, the MPS structure can suppress the high electric field at the Schottky interface with the inserted p-GaN, thereby enhancing the reverse breakdown characteristics. However, the adoption of the p-GaN structure can result in a locally crowded electric field at reserve bias condition and thus a premature breakdown of the device. Moreover, the p-GaN structure depletes the vertical channel region, which may degrade the on-performance at forward bias condition. We found that the doping concentration, width, and depth of the p-GaN structure are closely correlated with the electric field distribution at reverse bias and the channel resistance at forward bias, and thus determines the reverse and forward characteristics of the MPS diodes. The unique forward unipolar/bipolar characteristics of the MPS diode was also investigated and discussed systematically. The results can pave the way for the development of GaN power electronic devices towards a compact high-frequency and high-voltage power electronic system.

All the Authors:Sihao Chen,Hang Chen

First Author:Heng Wang

Indexed by:Journal paper

Correspondence Author:Chao Liu

Document Type:J

Volume:10

Page Number:504

Translation or Not:no

Date of Publication:2022-06-01

Included Journals:SCI

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