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1.2 kV-class Vertical GaN Power MOSFETs with Monolithically Integrated Freewheeling Merged P-i-N Schottky Diodes
Journal:14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov. 12-17
All the Authors:Heng Wang,Sihao Chen
First Author:Yuchuan Ma
Correspondence Author:Chao Liu
Translation or Not:no
Date of Publication:2023-11-01