A Novel Si-GaN Monolithic Integration Technology for a High-Voltage Cascoded Diode
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发表刊物：IEEE Electron Device Letters
关键字：Silicon, Aluminum gallium nitride, Wide band gap semiconductors, Gallium nitride， Logic gates, Leakage currents, Silicon compounds
摘要：In this letter, a novel approach for monolithic integration of Si-based and GaN-based devices on Si substrate for high-voltage power switching applications is reported. To enable the integration, AlGaN/GaN epitaxial growth is carried out in recessed windows on a Si (111) substrate by selective epitaxial growth. A cascoded diode formed by series connection of a Si diode and a normally- ON AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor is experimentally demonstrated by using this technology. The cascoded diode features a breakdown voltage of 557 V and a differential specific ON-resistance of 2.8 mΩ⋅ cm 2 at 500 A/cm 2 . Its reverse leakage current is two orders of magnitude lower compared with the conventional AlGaN/GaN Schottky barrier diode. The characterization results of the fabricated cascoded diode demonstrate that the proposed Si–GaN monolithic integration technology is compatible with both Si and GaN fabrication processes.
全部作者：Chao Liu,C W Tang,Kei May Lau
第一作者：Jie Ren
论文类型：期刊论文
通讯作者：J. K.O. Sin
卷号：38
页面范围：501 - 504
是否译文：否
发表时间：2017-02-01
收录刊物：SCI
发表时间：2017-02-01
附件：Cascoded GaN-Si diode.pdf 下载[] 次