教授
博士生导师
硕士生导师
性别:男
毕业院校:香港科技大学
学位:博士
在职信息:在职
所在单位:集成电路学院
入职时间:2019-04-26
学科:微电子学与固体电子学
办公地点:山东大学软件园校区3-B栋302室
电子邮箱:chao.liu@sdu.edu.cn
访问量:
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[21]
Mengran Liu , Yongchen Ji , Hang Zhou , Changsheng Xia , Zihui Zhang and Chao Liu.
Sheet charge engineering towards an efficient hole injection in 290 nm deep ultraviolet light-emitting diodes.
IEEE Photonics Journal,
13,
8200308,
2021.
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[22]
Riyaz Abdul Khadar , Alessandro Floriduz , Chao Liu , Reza Soleimanzadeh Ardebili and Elison Matioli.
Quasi-vertical GaN-on-Si reverse blocking power MOSFETs.
Applied Physics Express,
2021.
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[23]
Yu Zhang , Chao Liu , Min Zhu , Yuliang Zhang and Xinbo Zou.
A Review on GaN-based Two-Terminal Devices Grown on Si Substrates.
Journal of Alloys and Compounds,
869,
2021.
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[24]
Riyaz A Khadar , Chao Liu , Soleimanzadeh A Reza and Elison Matioli.
Fully-vertical GaN-on-Si power MOSFETs.
IEEE Electron Device Letters,
40,
443,
2019.
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[25]
Huaxing Jiang , Chao Liu , Kar Wei Ng , Chak Wah Tang and Kei May Lau.
High Performance AlGaN/GaN/Si Power MOSHEMTs with ZrO2 Gate Dielectric.
IEEE Transactions on Electron Devices,
12,
5337,
2018.
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[26]
Yuefei Cai , Xinbo Zou , Chao Liu and Kei May Lau.
Voltage-controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters.
IEEE Electron Device Letters,
39,
224,
2018.
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[27]
Chao Liu , Riyaz Abdul Khadar and Elison Matioli.
GaN-on-Silicon Quasi-Vertical Power MOSFETs.
IEEE Electron Device Letters,
39,
71,
2018.
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[28]
Chao Liu , Yuefei Cai , Huaxing Jiang and Kei May Lau.
Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy.
Optics Letters,
14,
3401,
2018.
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[29]
Chao Liu , Riyaz Abdul Khadar and Elison Matioli.
Vertical GaN-on-Si MOSFETs with Monolithically Integrated Freewheeling Schottky Barrier Diodes.
IEEE Electron Device Letters,
39,
1034,
2018.
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[30]
Riyaz A Khadar , Chao Liu , Liyang Zhang , Peng Xiang , Kai Cheng and Elison Matioli.
820 V GaN-on-Si Quasi-Vertical PiN Diodes with BFOM of 2.0 GW/cm2.
IEEE Electron Device Letters,
39,
401,
2018.
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[31]
Chao Liu , Riyaz Abdul Khadar and Elison Matioli.
645 V Quasi-Vertical GaN Power Transistors on silicon substrates.
30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17,
2018.
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[32]
Chao Liu , Riyaz Abdul Khadar and Elison Matioli.
Vertical GaN-on-Si MOSFET with Monolithically Integrated Freewheeling Schottky Barrier Diode.
Compound Semiconductor Week (CSW), Boston, USA, May 29 - June 1,
2018.
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[33]
Xing Lu , Chao Liu , Huaxing Jiang , Xinbo Zou and Kei May Lau.
High-Performance Monolithically Integrated GaN Driving VMOSFET on LED.
IEEE Electron Device Letters,
38,
752,
2017.
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[34]
Jie Ren , Chao Liu , Yuying Chen , Chak Wah Tang , Kei May Lau and Johnny K.O. Sin.
Switching characteristics of monolithically integrated Si- GaN cascoded rectifiers.
29th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Royton Sapporo, Sapporo, Japan, May 28-June 1,
2017.
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[35]
Jie Ren , Chao Liu , C W Tang , Kei May Lau and J. K.O. Sin.
A Novel Si-GaN Monolithic Integration Technology for a High-Voltage Cascoded Diode.
IEEE Electron Device Letters,
38,
501 - 504,
2017.
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[36]
Huaxing Jiang , Chao Liu , Yuying Chen , Xing Lu , Chak Wah Tang and Kei May Lau.
Investigation of In-situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs.
IEEE Transactions on Electron Devices,
64,
832-839,
2017.
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[37]
Yuefei Cai , Xinbo Zou , Chao Liu and Kei May Lau.
Voltage-Controlled Light Modulation Enabled by Monolithically Integrated HEMT-LED Device.
International workshop on Nitride Semiconductors (IWN 2016), Orlando, USA, October 2-7,
2016.
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[38]
Xing Lu , Huaxing Jiang , Chao Liu , Xinbo Zou and Kei May Lau.
Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing.
Semiconductor Science and Technology,
a31,
055019,
2016.
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[39]
Huaxing Jiang , Xing Lu , Chao Liu and Kei May Lau.
Off‐state drain leakage reduction by post metallization annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Si.
Physica status solidi (a),
213,
868,
2016.
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[40]
Chao Liu , Yuefei Cai , Huaxing Jiang and Kei May Lau.
Optimization of a common buffer platform for monolithic integration of InGaN/GaN light emitting diodes and AlGaN/GaN high electron mobility transistors.
Journal of Electronic Materials,
45,
2092,
2016.
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