研究成果多次被IEEE Spectrum, Semiconductor Today, Compound Semiconductor等国际产业杂志亮点报道:
2019- Semiconductor Today magazine feature:"First "demonstration of fully vertical gallium nitride transistors on silicon
2018- Semiconductor Today magazine feature: Schottky diodes integrated in vertical gallium nitride transistors on silicon
2018- Semiconductor Today magazine feature: ‘First’ quasi-vertical gallium nitride trench MOSFET on six-inch silicon
2018- IEEE Spectrum magazine feature: New Device Could Drive Micro-LED Displays, Li-Fi
2017- Semiconductor Today magazine feature: Monolithic gallium nitride vertical transistor and light-emitting diode
2017- Semiconductor Today magazine feature: Silicon and III-nitride high-voltage monolithic cascode diode
2016- Compound Semiconductor magazine feature: Diode’s reverse leakage hits new low
2015- Semiconductor Today magazine feature: Gallium nitride HEMT-LED without metal interconnection
2014- Semiconductor Today magazine feature: Monolithic integration of nitride semiconductor HEMTs and LEDs