false

刘超 (教授)

false

教授 博士生导师 硕士生导师

性别:男

毕业院校:香港科技大学

学历:研究生(博士)毕业

学位:博士

在职信息:在职

所在单位:微电子学院

入职时间:2019-04-26

学科:微电子学与固体电子学

办公地点:山东大学软件园校区3-B栋302室

电子邮箱:chao.liu@sdu.edu.cn

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  • 宽禁带半导体材料与器件

    GaN电力电子器件

    GaN光电子器件

    单片微系统集成

    智能照明芯片

    MOCVD外延




  • Selected Conference presentation:

    1. Chao Liu*, Riyaz Abdul Khadar, and Elison Matioli*, Vertical GaN-on-Si MOSFET with Monolithically Integrated Freewheeling Schottky Barrier Diode, Compound Semiconductor Week (CSW), Boston, USA, May 29 - June 1, 2018

    2. Chao Liu*, Riyaz Abdul Khadar, and Elison Matioli*, 645 V Quasi-Vertical GaN Power Transistors on silicon substrates, 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17, 2018

    3. Chao Liu, Huaxing Jiang, Yuefei Cai, and Kei May Lau*, Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects, Compound Semiconductor Week (CSW), Toyama, Japan, Jun 26-30, 2016

    4. Chao Liu, Yuefei Cai, and Kei May Lau*, Enhanced optical performance of monolithically integrated HEMT-LED by buffer optimization, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015

    5. Chao Liu, Yuefei Cai, Zhaojun Liu, Jun Ma, and Kei May Lau*, Buffer optimization of monolithically integrated HEMT-LED using a metal- interconnection-free scheme, 57th Electronic Materials Conference (EMC),Columbus, Ohio, USA, Jun 24-26, 2015

    6. Chao Liu, Zhaojun Liu, Tongde Huang, Jun Ma, and Kei May Lau*, Improved breakdown characteristics of monolithically integrated III-nitride HEMT- LED devices using carbon doping, 17th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE), Lausanne, Switzerland, July 13- 18, 2014

    7. Chao Liu, Taiping Lu, Zhiwei Ren, Xin Chen, Bijun Zhao, Yian Yin, Jinhui Tong, and Shuti Li*, Study of blue InGaN multiple quantum well light- emitting diodes with p-type quantum barriers, Asian Communication and Photonics Conference (ACP), Guangzhou, China, Nov 7-10, 2012

    8. Jie Ren*, Chao Liu, Yuying Chen, Chak Wah Tang, Kei May Lau, and Johnny K.O. Sin, Switching characteristics of monolithically integrated Si- GaN cascoded rectifiers, 29th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Royton Sapporo, Sapporo, Japan, May 28–June 1, 2017

    9. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau*, High Voltage Low Current Collapse AlGaN/GaN MISHEMTs with in-situ SiN Gate Dielectric, Compound Semiconductor Week (CSW), Toyama, Japan, Jun 26-30, 2016

    10. Tongde Huang*, Chao Liu, Johan Bergsten, Huaxing Jiang, Kei May Lau, and Niklas Rorsman, Fabrication and Improved Performance of AlGaN/GaN HEMTs with Regrown Ohmic Contacts and Passivation-First Process, Compound Semiconductor Week (CSW), Toyama, Japan, Jun 26-30, 2016

    11. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau*, Effective suppression of Current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation, International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH), Miami, Florida, USA, May 16-19, 2016

    12. Kun Yu, Chao Liu, Huaxing Jiang, Xing Lu, Kei May Lau, and Anping Zhang, Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs, International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), Miami, Florida, USA, May 16-19, 2016

    13. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau, Control of threshold voltage in ultrathin-barrier AlGaN/GaN based MISHEMTs with low-frequency SiNx gate dielectric and Al2O3 interfacial layer, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015

    14. Jie Ren, Chao Liu, Kei May Lau, and Johnny K. O. Sin, Effect of high-temperature thermal treatment on AlGaN/GaN HEMT Epi for monolithic integration, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015

    15. Yuefei Cai, Xinbo Zou, Chao Liu, and Kei May Lau, Voltage-Controlled Light Modulation Enabled by Monolithically Integrated HEMT-LED Device, International workshop on Nitride Semiconductors (IWN 2016), Orlando, USA, October 2-7, 2016

    16. Xing Lu, Huaxing Jiang, Chao Liu, and Kei May Lau, Improved performance of AlGaN/GaN HEMTs by O2-plasma and HCl surface treatment, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015

    17. Huaxing Jiang, Xing Lu, Chao Liu, and Kei May Lau, Off-state Drain Leakage Reduction by Post Metallization Annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Silicon, Compound Semiconductor Week (CSW), Santa Barbara, California, USA, June 2015

    18. Jun Ma, Xing Lu, Tongde Huang, Chao Liu, and Kei May Lau*, Improved buffer resistivity for GaN-based HEMTs using a medium-temperature and low-pressure GaN insertion layer, 17th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE), Lausanne, Switzerland, July 13-18, July, 2014




  • 1. 山东大学齐鲁青年学者启动经费,100万,主持

    2. III-Nitride Nanostructures for Energy Efficient Devices,欧洲研究委员会(ERC), 欧盟地平线2020计划

    主要参与人,负责硅衬底上垂直结构功率器件的研发 

    3. Cost-effective and eco-friendly LED system-on-chip (SOC), 香港研究资助局 (RGC) Theme-based Research Scheme

    主要参与人,负责智能照明芯片中GaN HEMT-LED-PD的单芯片集成与制备

    5. A Novel Monolithically Integrated GaN HEMT-Si MOSFET High-Voltage Cascode Structure,香港研究资助局(RGC)

    主要参与人,负责单片集成的Si-GaN芯片模组中的GaN HEMT部分以及MOCVD选区外延生长

    6. Research on High power & high brightness LED epi wafers, 广东省科技攻关计划

    主要参与人,负责高亮度蓝光LED的结构设计、MOCVD生长、制备与测试



  • 受邀担任多个半导体材料与器件领域权威期刊审稿人:

    美国物理学会(APS):

    Applied Physics Letters, Journal of Applied Physics

    美国光学学会(OSA):

    Optics Letters, Optics Express, Optical Materials Express, Photonics Research, Applied Optics

    美国化学学会(ACS):

    ACS Applied Materials & Interfaces

    日本物理学会(JPSJ):

    Applied Physics Express, Japanese Journal of Applied Physics

    爱思唯尔(Elsevier):

    Journal of Crystal Growth (outstanding reviewer 2018)

    电气与电子工程师协会(IEEE):

    IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Photonics Technology Letters, IEEE Transactions on Industrial Electronics, IEEE Photonics Journal