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宽禁带半导体材料与器件
GaN电力电子器件
GaN光电子器件
单片微系统集成
智能照明芯片
MOCVD外延
- Riyaz A Khadar , Chao Liu , Soleimanzadeh A Reza and Elison Matioli. Fully-vertical GaN-on-Si power MOSFETs. IEEE Electron Device Letters, 40, 443, 2019.
- Chao Liu , Riyaz Abdul Khadar and Elison Matioli. GaN-on-Silicon Quasi-Vertical Power MOSFETs. IEEE Electron Device Letters, 39, 71, 2019.
- Chao Liu , Riyaz Abdul Khadar and Elison Matioli. Vertical GaN-on-Si MOSFETs with Monolithically Integrated Freewheeling Schottky Barrier Diodes. IEEE Electron Device Letters, 39, 1034, 2019.
- Riyaz A Khadar , Chao Liu , Liyang Zhang , Peng Xiang , Kai Cheng and Elison Matioli. 820 V GaN-on-Si Quasi-Vertical PiN Diodes with BFOM of 2.0 GW/cm2. IEEE Electron Device Letters, 39, 401, 2019.
- Chao Liu , Yuefei Cai , Huaxing Jiang and Kei May Lau. Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy. Optics Letters, 14, 3401, 2019.
- Chao Liu , Yuefei Cai , Xinbo Zou and Kei May Lau. Low-leakage High-breakdown Laterally Integrated HEMT-LED via n-GaN Electrode. IEEE Photonics Technology Letter, 28, 1130, 2019.
- Chao Liu , Zhaojun Liu , Tongde Huang , Jun Ma and Kei May Lau. Improved breakdown characteristics of monolithically integrated III-nitride HEMT- LED devices using carbon doping. Journal of Crystal Growth, 414, 243, 2019.
- Chao Liu , Yuefei Cai , Xinbo Zou and Kei May Lau. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 106, 181110, 2019.
- Chao Liu , Yuefei Cai , Huaxing Jiang and Kei May Lau. Optimization of a common buffer platform for monolithic integration of InGaN/GaN light emitting diodes and AlGaN/GaN high electron mobility transistors. Journal of Electronic Materials, 45, 2092, 2019.
- Chao Liu , Zhiwei Ren , Xin Chen , Bijun Zhao , Xingfu Wang , Yian Yin and Shuti Li. Study of InGaN/GaN light emitting diodes with step-graded electron blocking layer. IEEE Photonics Technology Letters, 26, 134, 2019.
- Chao Liu , Zhiwei Ren , Xin Chen , Bijun Zhao , Xingfu Wang and Shuti Li. Reduced droop effect in nitride light emitting diodes by taper shaped electron blocking layer. IEEE Photonics Technology Letters, 26, 1368, 2019.
- Chao Liu , Taiping Lu , Lejuan Wu , Hailong Wang , Yian Yin , Guowei Xiao , Yugang Zhou and Shuti Li. Enhanced Performance of Blue Light-Emitting Diodes with InGaN/GaN Superlattice as Hole Gathering Layer. IEEE Photonics Technology Letters, 24, 1239, 2019.
- Chao Liu , Zhiwei Ren , Xin Chen , Bijun Zhao , Xingfu Wang , Yian Yin and Shuti Li. Advantage of an InGaN based light emitting diodes with p-InGaN/p- GaN superlattice hole accumulation layer. Chinese Physics B, 22, 058502, 2019.
- Xing Lu , Chao Liu , Huaxing Jiang , Xinbo Zou and Kei May Lau. High-Performance Monolithically Integrated GaN Driving VMOSFET on LED. IEEE Electron Device Letters, 38, 752, 2019.
- Huaxing Jiang , Chao Liu , Kar Wei Ng , Chak Wah Tang and Kei May Lau. High Performance AlGaN/GaN/Si Power MOSHEMTs with ZrO2 Gate Dielectric. IEEE Transactions on Electron Devices, 12, 5337, 2019.
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Selected Conference presentation:
1. Chao Liu*, Riyaz Abdul Khadar, and Elison Matioli*, Vertical GaN-on-Si MOSFET with Monolithically Integrated Freewheeling Schottky Barrier Diode, Compound Semiconductor Week (CSW), Boston, USA, May 29 - June 1, 2018
2. Chao Liu*, Riyaz Abdul Khadar, and Elison Matioli*, 645 V Quasi-Vertical GaN Power Transistors on silicon substrates, 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17, 2018
3. Chao Liu, Huaxing Jiang, Yuefei Cai, and Kei May Lau*, Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects, Compound Semiconductor Week (CSW), Toyama, Japan, Jun 26-30, 2016
4. Chao Liu, Yuefei Cai, and Kei May Lau*, Enhanced optical performance of monolithically integrated HEMT-LED by buffer optimization, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015
5. Chao Liu, Yuefei Cai, Zhaojun Liu, Jun Ma, and Kei May Lau*, Buffer optimization of monolithically integrated HEMT-LED using a metal- interconnection-free scheme, 57th Electronic Materials Conference (EMC),Columbus, Ohio, USA, Jun 24-26, 2015
6. Chao Liu, Zhaojun Liu, Tongde Huang, Jun Ma, and Kei May Lau*, Improved breakdown characteristics of monolithically integrated III-nitride HEMT- LED devices using carbon doping, 17th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE), Lausanne, Switzerland, July 13- 18, 2014
7. Chao Liu, Taiping Lu, Zhiwei Ren, Xin Chen, Bijun Zhao, Yian Yin, Jinhui Tong, and Shuti Li*, Study of blue InGaN multiple quantum well light- emitting diodes with p-type quantum barriers, Asian Communication and Photonics Conference (ACP), Guangzhou, China, Nov 7-10, 2012
8. Jie Ren*, Chao Liu, Yuying Chen, Chak Wah Tang, Kei May Lau, and Johnny K.O. Sin, Switching characteristics of monolithically integrated Si- GaN cascoded rectifiers, 29th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Royton Sapporo, Sapporo, Japan, May 28–June 1, 2017
9. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau*, High Voltage Low Current Collapse AlGaN/GaN MISHEMTs with in-situ SiN Gate Dielectric, Compound Semiconductor Week (CSW), Toyama, Japan, Jun 26-30, 2016
10. Tongde Huang*, Chao Liu, Johan Bergsten, Huaxing Jiang, Kei May Lau, and Niklas Rorsman, Fabrication and Improved Performance of AlGaN/GaN HEMTs with Regrown Ohmic Contacts and Passivation-First Process, Compound Semiconductor Week (CSW), Toyama, Japan, Jun 26-30, 2016
11. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau*, Effective suppression of Current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation, International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH), Miami, Florida, USA, May 16-19, 2016
12. Kun Yu, Chao Liu, Huaxing Jiang, Xing Lu, Kei May Lau, and Anping Zhang, Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs, International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), Miami, Florida, USA, May 16-19, 2016
13. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau, Control of threshold voltage in ultrathin-barrier AlGaN/GaN based MISHEMTs with low-frequency SiNx gate dielectric and Al2O3 interfacial layer, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015
14. Jie Ren, Chao Liu, Kei May Lau, and Johnny K. O. Sin, Effect of high-temperature thermal treatment on AlGaN/GaN HEMT Epi for monolithic integration, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015
15. Yuefei Cai, Xinbo Zou, Chao Liu, and Kei May Lau, Voltage-Controlled Light Modulation Enabled by Monolithically Integrated HEMT-LED Device, International workshop on Nitride Semiconductors (IWN 2016), Orlando, USA, October 2-7, 2016
16. Xing Lu, Huaxing Jiang, Chao Liu, and Kei May Lau, Improved performance of AlGaN/GaN HEMTs by O2-plasma and HCl surface treatment, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015
17. Huaxing Jiang, Xing Lu, Chao Liu, and Kei May Lau, Off-state Drain Leakage Reduction by Post Metallization Annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Silicon, Compound Semiconductor Week (CSW), Santa Barbara, California, USA, June 2015
18. Jun Ma, Xing Lu, Tongde Huang, Chao Liu, and Kei May Lau*, Improved buffer resistivity for GaN-based HEMTs using a medium-temperature and low-pressure GaN insertion layer, 17th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE), Lausanne, Switzerland, July 13-18, July, 2014
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1. 山东大学齐鲁青年学者启动经费，100万，主持
2. III-Nitride Nanostructures for Energy Efficient Devices，欧洲研究委员会(ERC), 欧盟地平线2020计划
主要参与人，负责硅衬底上垂直结构功率器件的研发
3. Cost-effective and eco-friendly LED system-on-chip (SOC), 香港研究资助局 (RGC) Theme-based Research Scheme
主要参与人，负责智能照明芯片中GaN HEMT-LED-PD的单芯片集成与制备
5. A Novel Monolithically Integrated GaN HEMT-Si MOSFET High-Voltage Cascode Structure，香港研究资助局(RGC)
主要参与人，负责单片集成的Si-GaN芯片模组中的GaN HEMT部分以及MOCVD选区外延生长
6. Research on High power & high brightness LED epi wafers, 广东省科技攻关计划
主要参与人，负责高亮度蓝光LED的结构设计、MOCVD生长、制备与测试
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受邀担任多个半导体材料与器件领域权威期刊审稿人:
美国物理学会(APS)：
Applied Physics Letters, Journal of Applied Physics
美国光学学会(OSA)：
Optics Letters, Optics Express, Optical Materials Express, Photonics Research, Applied Optics
美国化学学会(ACS)：
ACS Applied Materials & Interfaces
日本物理学会(JPSJ)：
Applied Physics Express, Japanese Journal of Applied Physics
爱思唯尔(Elsevier)：
Journal of Crystal Growth (outstanding reviewer 2018)
电气与电子工程师协会(IEEE)：
IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Photonics Technology Letters, IEEE Transactions on Industrial Electronics, IEEE Photonics Journal