研究方向
基于二维材料的逻辑器件、存储器件、太赫兹器件，存算一体器件，感存算一体器件和神经形态器件等
文章代表作 (第一作者8 篇)
Jing Chen, Guanhua Dun, Jianguo Hu, Zhu Lin, Yuhao Wang, Tian Lu, Ping Li, Tiantian Wei, Junqiang Zhu, Jing Wang, Xiyou Li, Xiao-Ming Wu*, Yi Yang, and Tian-Ling Ren* Polarized Tunneling Transistor for Ultrafast Memory. ACS Nano 2023, 17, 13, 12374-12382.
Chen J*, Zhu J, Wang Q, Wan J*, Liu R. Homogeneous 2D MoTe2 CMOS Inverters and p-n Junctions Formed by Laser-Irradiation-Induced p-Type Doping. Small. 2020 Jul;16(30):e2001428. doi: 10.1002/smll.202001428.
Chen J, Wang Q, Sheng Y, Cao G, Yang P, Shan Y, Liao F, Muhammad Z, Bao W, Hu L, Liu R, Cong C, Qiu ZJ. High-Performance WSe2 Photodetector Based on a Laser-Induced p-n Junction. ACS Appl Mater Interfaces. 2019 Nov 20;11(46):43330-43336. doi: 10.1021/acsami.9b13948.
Chen J*, Shan Y, Wang Q, Zhu J, Liu R. P-type laser-doped WSe2/MoTe2 van der Waals heterostructure photodetector. Nanotechnology. 2020 May 1;31(29):295201. doi: 10.1088/1361-6528/ab87cd.
J. Chen*, Y. Shan, P. Li, X. -M. Wu and T. -L. Ren*, "Self-Powered Multicolor Broadband Photodetector Based on GaSe/WSe₂//WSe₂/BP Van Der Waals Heterostructure," in IEEE Transactions on Electron Devices, vol. 68, no. 8, pp. 3881-3886, Aug. 2021, doi: 10.1109/TED.2021.3086447.
J. Chen* et al., "Reconfigurable MoTe2 Field-Effect Transistors and its Application in Compact CMOS Circuits," in IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4748-4753, Sept. 2021, doi: 10.1109/TED.2021.3096493.
J. Chen* et al., "Fabricating In-Plane MoTe2 p-n Homojunction Photodetector Using Laser-Induced p-Type Doping," in IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4485-4490, Sept. 2021, doi: 10.1109/TED.2021.3099082.
J. Chen* et al., "The α-In2Se3 THz photodetector " IEEE Transactions on Electron Devices. IEEE Transactions on Electron Devices, vol. 69, no. 8, pp. 4371-4376, Aug. 2022, doi: 10.1109/TED.2022.3184621.
期刊审稿人
IEEE EDL, IEEE TED, RSC Advances, IEEE Sensors Journal
主持基金
国家青年自然科学基金, 北京信息科学和技术国家研究中心2023年度开放课题
