中文

Zn2GeO4x/ZnS heterojunctions fabricated via in situ etching sulfurization for Pt-free photocatalytic hydrogen evolution: interface roughness and defect engineering

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  • Affiliation of Author(s):化学与化工学院

  • Journal:Physical Chemistry Chemical Physics

  • First Author:樊唯镏

  • Document Code:459A9C1DF8BC4309B1D6F328614C9CAA

  • Number of Words:5000

  • Translation or Not:no

  • Date of Publication:2020-05-13

  • Date of Publication:2020-05-13

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