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Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites

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Affiliation of Author(s):化学与化工学院

Journal:NANO ENERGY

All the Authors:liqiang

First Author:Wang, Zegao

Indexed by:Applied Research

Document Code:1A77BCBE6863402B95BECD71B51A29AB

Volume:49

Page Number:634

Translation or Not:no

Date of Publication:2018-07-01

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