理学博士,二级岗教授,享受国务院政府特殊津贴。主要研究方向为氧化物宽带隙半导体材料与器件。主持“九五”国家重点科技攻关课题及国家自然科学基金项目等10余项。获得教育部自然科学一等奖、山东省自然科学三等奖和山东省科技进步三等奖各1项,获得国家发明专利12项,出版半导体科学与技术丛书《透明氧化物半导体》专著一部,发表SCI收录论文180余篇。
山东大学 
山东大学  ,物理系 ,教师
山东邹县中心公社下乡知青 
本科生课程名称 | 学期 | 学分 | 课程号 |
---|---|---|---|
电磁场与电磁波 |
春学期 |
3.0 |
sd04030910 |
电动力学 |
春学期 |
3.0 |
sd04030290 |
名称 | 简介 |
---|---|
氧化物宽带隙半导体材料与器件 |
氧化物宽带隙半导体材料与器件 |
项目名称 | 项目周期 |
---|---|
钛酸锌和锡酸锌单晶薄膜的异质外延生长及性质研究 |
2018/08/16,2022/12/31 |
可用于下一代光电器件的Beta-氧化镓单晶薄膜的制备及性质研究 |
2018/04/01,2020/12/31 |
可转移的、稀土元素掺杂的Beta-氧化镓基发光二极管的制备及性能研究 |
2019/04/26,2022/06/30 |
获奖时间 | 奖项名称 |
---|---|
山东省科学技术奖 |
【1】张彪.High Crystalline Quality Ta-Doped h-ZnTiO3 Epitaxial Films: Characteristics and Application in UV DetectorsACS Applied Electronic Materials,2024.
【2】朱宏艳.Fabrication of ZnSnO3 single crystal films on sapphire substrates by pulsed laser deposition for solar-blind photodetectors. APPLIED PHYSICS LETTERS, 124,2024.
【3】朱宏艳.High-performance solar-blind photodetectors based on Ta-doped ZnSnO3 single crystal thin films. JOURNAL OF ALLOYS AND COMPOUNDS , 997,2024.
【4】张彪.Hexagonal ZnTiO3 single-crystalline films on α-Al2O3 substrates: Structural and photoelectric properties. JOURNAL OF ALLOYS AND COMPOUNDS , 1008,2024.
【5】陈蓉蓉.High responsivity self-powered DUV photodetectors based on β-Ga2O3/GaN heterogeneous PN junctionsVACUUM:112332,2023.
【6】朱宏艳.Effect of oxygen pressure during the growth of ZnSnO3 epitaxial thin films on LiNbO3 substratesApplied Surface Science:158029,2023.
【7】陈蓉蓉.High crystal quality β-Ga2O3 epitaxial films grown on porous n-GaN substratesMaterials Science in Semiconductor Processing:107859,2023.
【8】陈蓉蓉.Self-powered deep ultraviolet PIN photodetectors with excellent response performance based on Ga2O3 epitaxial films grown on p-GaNAPPLIED PHYSICS LETTERS,2023.
【9】乐永.High performance UV photodetectors based on W doped δ-Ta2O5 single crystalline films. APPLIED PHYSICS LETTERS, 122,2023.
【10】张彪.Hexagonal ZnTiO3 monocrystalline films on LiNbO3 substrates: Structural and optical properties. Ceramics International, 49:23805,2023.
【11】.Hexagonal ZnTiO3 monocrystalline films on LiNbO3 substrates: Structural and optical propertiesCERAMICS INTERNATIONAL,2023.
【12】马瑾.Heteroepitaxial growth of the δ-Ta2O5 films on a-Al2O3(0001)Journal of Materials Science-Materials in Electronics,2022.
【13】马瑾.Fabrication and characterization of monocrystalline Zn2TiO4 films on MgO (111) substrates by PLDFUNCTIONAL MATERIALS LETTERS:1,2022.
【14】马瑾.Heteroepitaxial growth of the orthorhombic Ta2O5 single-crystalline films on epi-GaN/α-Al2O3 (0001) substrates by MOCVDCERAMICS INTERNATIONAL Journal:26800,2022.
【15】王迪.Solar-blind ultraviolet photodetectors based on Ta-doped β-Ga2O3 heteroepitaxial films. OPTICAL MATERIALS, 129,2022.
【16】肖洪地.Ta-Doped Ga2O3 Epitaxial Films on Porous p?GaN Substrates: Structure and Self-Powered Solar-Blind PhotodetectorsJournal of crystal growth:5285,2022.
【17】朱宏艳.High-quality and single-crystal ZnSnO3 thin films: Fabrication and properties. VACUUM, 197,2022.
【18】栾彩娜.Preparation and characterization of heteroepitaxial Zn2SnO4 single crystalline films prepared on MgO (100) substrates. Journal of the American Ceramics Society, 103:2555,2019.
【19】栾彩娜.Effect of niobium doping on the structural, electrical and optical properties of epitaxial SnO2 films on MgF2 (110) substrates by MOCVDJOURNAL OF ALLOYS AND COMPOUNDS ,2018.
【20】栾彩娜.Characterization of Rutile SnO2 Epitaxial Films Grown on MgF2 (001) Substrates by MOCVD. Crystal Research and Technology, 53,2018.
【21】栾彩娜.UV–vis transparent conducting Ta-doped SnO2 epitaxial films grown by metal-organic chemical vapor depositionMaterials Research Bulletin:110488,2019.
【22】张彪.Structural and optical properties of single crystal Zn2TiO4 films prepared on MgO (110) substrates. CERAMICS INTERNATIONAL Journal, 48:4312,2022.
【23】王迪.Effect of epitaxial growth rate on morphological, structural and optical properties of beta-Ga2O3 films prepared by MOCVD. Materials Research Bulletin, 149,2022.
【24】马瑾.Synthesis of δ-Ta2O5 heteroepitaxial films on YVO4 (100) substratesMaterials Science in Semiconductor Processing:106065,2021.
【25】肖洪地.Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial films on etched epi-GaN/sapphire substratesCermics International :9597,2021.
【26】乐永.Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) substrates. MATERIALS LETTERS Journal, 302,2021.
【27】王迪.Characterization of single crystal beta-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD. CERAMICS INTERNATIONAL Journal, 46:4568,2020.
【28】王迪.Preparation and properties of heteroepitaxial beta-Ga2O3 films on KTaO3 (100) substrates by MOCVD. MATERIALS CHARACTERIZATION Journal, 165,2020.
专利名称 | 简介 | 日期 |
---|---|---|
一种高质量钛铁矿结构偏钛酸锌单晶薄膜及其制备方法与应用 |
2022/07/19 |
|
一种高质量锡酸锌单晶薄膜及其制备方法 |
2020/11/27 |
|
一种正钛酸锌单晶薄膜及其制备方法 |
2022/08/09 |
|
一种可调制带隙宽度的镓铟氧化物薄膜及其制备方法 |
2009/12/30 |
|
一种锑掺杂多元氧化物透明导电膜的制备方法 |
2006/11/29 |
|
一种带隙宽度可调的铝铟氧化物薄膜材料及其制备方法 |
2016/04/06 |
|
一种氧化锡单晶薄膜的制备方法 |
2009/04/15 |
|
一种正交结构氧化锡单晶薄膜的制备方法 |
2011/11/23 |
|
一种高迁移率铌掺杂氧化锡单晶薄膜的制备方法 |
2019/10/01 |
|
一种镓掺杂氧化锌透明导电膜的制备方法 |
2005/06/21 |
|
一种在氧化镁衬底上制备单斜晶型氧化镓单晶薄膜的方法 |
2010/11/04 |
|
一种氧化铟单晶外延薄膜的制备方法 |
2008/03/31 |
著作名称 | 简介 | 日期 |
---|---|---|
透明氧化物半导体 |
2014/09/10 |