【1】陈蓉蓉.High responsivity self-powered DUV photodetectors based on β-Ga2O3/GaN heterogeneous PN junctionsVACUUM:112332,2023.

【2】朱宏艳.Effect of oxygen pressure during the growth of ZnSnO3 epitaxial thin films on LiNbO3 substratesApplied Surface Science:158029,2023.

【3】陈蓉蓉.High crystal quality β-Ga2O3 epitaxial films grown on porous n-GaN substratesMaterials Science in Semiconductor Processing:107859,2023.

【4】陈蓉蓉.Self-powered deep ultraviolet PIN photodetectors with excellent response performance based on Ga2O3 epitaxial films grown on p-GaNAPPLIED PHYSICS LETTERS,2023.

【5】乐永.High performance UV photodetectors based on W doped δ-Ta2O5 single crystalline films. APPLIED PHYSICS LETTERS, 122,2023.

【6】张彪.Hexagonal ZnTiO3 monocrystalline films on LiNbO3 substrates: Structural and optical properties. Ceramics International, 49:23805,2023.

【7】.Hexagonal ZnTiO3 monocrystalline films on LiNbO3 substrates: Structural and optical propertiesCERAMICS INTERNATIONAL,2023.

【8】马瑾.Heteroepitaxial growth of the δ-Ta2O5 films on a-Al2O3(0001)Journal of Materials Science-Materials in Electronics,2022.

【9】马瑾.Fabrication and characterization of monocrystalline Zn2TiO4 films on MgO (111) substrates by PLDFUNCTIONAL MATERIALS LETTERS:1,2022.

【10】马瑾.Heteroepitaxial growth of the orthorhombic Ta2O5 single-crystalline films on epi-GaN/α-Al2O3 (0001) substrates by MOCVDCERAMICS INTERNATIONAL Journal:26800,2022.

【11】王迪.Solar-blind ultraviolet photodetectors based on Ta-doped β-Ga2O3 heteroepitaxial films. OPTICAL MATERIALS, 129,2022.

【12】肖洪地.Ta-Doped Ga2O3 Epitaxial Films on Porous p？GaN Substrates: Structure and Self-Powered Solar-Blind PhotodetectorsJournal of crystal growth:5285,2022.

【13】朱宏艳.High-quality and single-crystal ZnSnO3 thin films: Fabrication and properties. VACUUM, 197,2022.

【14】栾彩娜.Preparation and characterization of heteroepitaxial Zn2SnO4 single crystalline films prepared on MgO (100) substrates. Journal of the American Ceramics Society, 103:2555,2019.

【15】栾彩娜.Effect of niobium doping on the structural, electrical and optical properties of epitaxial SnO2 films on MgF2 (110) substrates by MOCVDJOURNAL OF ALLOYS AND COMPOUNDS ,2018.

【16】栾彩娜.Characterization of Rutile SnO2 Epitaxial Films Grown on MgF2 (001) Substrates by MOCVD. Crystal Research and Technology, 53,2018.

【17】栾彩娜.UV–vis transparent conducting Ta-doped SnO2 epitaxial films grown by metal-organic chemical vapor depositionMaterials Research Bulletin:110488,2019.

【18】张彪.Structural and optical properties of single crystal Zn2TiO4 films prepared on MgO (110) substrates. CERAMICS INTERNATIONAL Journal, 48:4312,2022.

【19】王迪.Effect of epitaxial growth rate on morphological, structural and optical properties of beta-Ga2O3 films prepared by MOCVD. Materials Research Bulletin, 149,2022.

【20】栾彩娜.Preparation and Characterization of High Mobility Nb-Doped SnO2 Transparent Conducting FilmsMaterials Science Forum:869,2020.

【21】马瑾.Synthesis of δ-Ta2O5 heteroepitaxial films on YVO4 (100) substratesMaterials Science in Semiconductor Processing:106065,2021.

【22】肖洪地.Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial films on etched epi-GaN/sapphire substratesCermics International :9597,2021.

【23】乐永.Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) substrates. MATERIALS LETTERS Journal, 302,2021.

【24】王迪.Characterization of single crystal beta-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD. CERAMICS INTERNATIONAL Journal, 46:4568,2020.

【25】何林安.Fabrication and characterization of ultraviolet detector based on epitaxial Ta-doped Zn2SnO4 films. Optical materials, 108,2020.

【26】王迪.Preparation and properties of heteroepitaxial beta-Ga2O3 films on KTaO3 (100) substrates by MOCVD. MATERIALS CHARACTERIZATION Journal, 165,2020.

【27】何林安.Preparation and characterization of heteroepitaxial Zn2SnO4 single crystalline films prepared on MgO (100) substrates. JOURNAL OF THE AMERICAN CERAMIC SOCIETY Journal, 103:2555,2020.

【28】王迪.Ta-doped epitaxial beta-Ga2O3 films deposited on SrTiO3(100) substrates by MOCVD. Materials Science in Semiconductor Processing, 128,2021.

【29】乐永.Synthesis and characterization of single-crystalline delta-Ta2O5 epitaxial films on Y-stabilized ZrO2 (111) substrates. CERAMICS INTERNATIONAL Journal, 47:5510,2021.

【30】王迪.Effect of Ta doping on the properties of beta-Ga2O3 heteroepitaxial films prepared on KTaO3(100) substrates. Journal of Materials Science: Materials in Electronics, 32:2757,2021.

【31】马瑾.Epitaxial growth of SnO2 films on 6H-SiC (0 0 0 1) by MOCVD. Materials Research Bulletin, 47:253,2012.

【32】马瑾.Structural and optical properties of heteroepitaxial beta Ga2O3 films grown on MgO (100) substrates. Thin Solid Films, 520:4270,2012.

【33】马瑾.Characterization of b-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique. VACUUM, 86:1850,2012.

【34】马瑾.Epitaxial growth of Ga2O3 thin films on MgO(110) substrate by metal–organic chemical vaporde position. Journal of crystal growth, 354:93,2012.

【35】马瑾.Characterization of b-Ga2O3 epitaxial films grown on MgO(111) substrates by metal-organic chemical vapor deposition. Materials letters, 87 :109,2012.

【36】冯先进, 肖洪地, 马瑾 and 赵伟.Fabrication and Characterization of High-Performance Thin-Film Transistors Based on Epitaxial Ta-Doped TiO2 Films. IEEE Transactions on Electron Devices, 66:4193,2019.

【37】栾彩娜, 冯先进, 肖洪地, 马瑾 and 何林安.UV-vis transparent conducting Ta-doped SnO2 epitaxial films grown by metal-organic chemical vapor deposition. Materials Research Bulletin, 118,2019.

【38】冯先进, 栾彩娜, 马瑾 and 赵伟.Structural, electrical and optical properties of epitaxial Ta-doped titania films by MOCVD. CrystEngComm, 20:5395,2018.

【39】栾彩娜, 冯先进, 马瑾 and 何林安.Characterization of Rutile SnO2 Epitaxial Films Grown on MgF2 (001) Substrates by MOCVD. Crystal Research and Technology, 53,2018.

【40】肖洪地, 冯先进, 马瑾 and 曹琼.beta-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD. Materials Science in Semiconductor Processing, 77:58,2018.

【41】冯先进, 栾彩娜, 马瑾 and 王伟广.Effect of Nb doping on structural and electrical properties of homoepitaxial rutile TiO2:Nb films. Ceramics International, 44:2432,2018.

【42】栾彩娜, 冯先进, 马瑾 and 赵伟.Characterization of niobium-doped titania epitaxial films deposited by metalorganic chemical vapor deposition. Materials Characterization, 137:263,2018.

【43】冯先进, 栾彩娜, 马瑾 and 何林安.Structural, optical and electrical properties of epitaxial rutile SnO2 films grown on MgF2 (110) substrates by MOCVD. Ceramics International, 44:869,2018.

【44】冯先进, 肖洪地, 马瑾 and 曹琼.Effect of annealing on the structural and optical properties of beta-Ga2O3 films prepared on gadolinium gallium garnet (110) by MOCVD. Ceramics International, 44:830,2018.

【45】马瑾 and 栾彩娜.Characterization of tunable band gap aluminum indium oxide films prepared on SiO2 (0001) by MOCVDJournal of Materials Science: Materials in Electronics,2016.

【46】马瑾, 冯先进 and 栾彩娜.Characterization of single crystalline a-TiO2 films on MgAl2O4(100) substrates by MOCVDCeramics International,2016.

【47】栾彩娜, 冯先进, 肖洪地, 马瑾 and 何林安.Effect of niobium doping on the structural, electrical and optical properties of epitaxial SnO2 films on MgF2 (110) substrates by MOCVD. JOURNAL OF ALLOYS AND COMPOUNDS, 741:677,2018.

【48】冯先进, 栾彩娜, 马瑾 and 王伟广.Effects of deposition temperature on the structural and optical properties of single crystalline rutile TiO2 films. Materials Chemistry and Physics, 211:172,2018.

【49】冯先进, 马瑾 and 王伟广.Structural, electrical and optical properties of In doped brookite TiO2 thin films deposited on YSZ (110) substrates by MOCVD. JOURNAL OF ALLOYS AND COMPOUNDS, 708:1195,2017.

【50】冯先进, 马瑾 and 王伟广.Epitaxial growth and properties of Nb-doped anatase TiO2 films on LSAT by MOCVD. JOURNAL OF ALLOYS AND COMPOUNDS, 729:38,2017.

【51】冯先进, 马瑾 and 杜学舰.Effect of Sn content on the structural and photoelectric properties of IATO films. journal of materials science, 52:367,2017.

【52】冯先进, 马瑾 and 赵伟.Structural and optical properties of heteroepitaxial anatase titania films on MgAl6O10 (100) substrates by MOCVD. Applied surface science, 426:369,2017.

【53】冯先进, 栾彩娜, 马瑾 and 徐海胜.Synthesis and characterization of structural and optical properties of single crystalline a-TiO2 films on MgAl2O4(111) substrate. 1ST INTERNATIONAL CONFERENCE ON NEW MATERIAL AND CHEMICAL INDUSTRY (NMCI2016), 167,2017.

【54】马瑾.Preparation and characterization of Ga2xIn2(1-x)O3 films deposited on ZrO2 (100) substrates by MOCVD. JOURNAL OF ALLOYS AND COMPOUNDS , 499:75,2010.

【55】马瑾 and 栾彩娜.Synthesis of monoclinic structure gallium oxide epitaxial film on MgAl6O10 (100)Materials letters,2013.

【56】马瑾 and 栾彩娜.Heteroepitaxy of SnO2 thin filmson m-plane sapphire by MOCVD. Journal of crystal growth, 324:98,2011.

【57】马瑾, 冯先进 and 栾彩娜.Preparation and characterization of single crystalline anatase TiO2 epitaxial films on LaAlO3(001) substrates by metal organic chemicalSCRIPTA MATERIALIA,2016.

【58】马瑾 and 冯先进.Synthesis and characterization of structural and optical properties of heteroepitaxial brookite TiO2 single crystalline filmsSCRIPTA MATER,2016.

【59】马瑾 and 栾彩娜.Ultraviolet–green photoluminescence of β-Ga2O3 films deposited on MgAl6O10 (1 0 0) substrateOptical Materials,2013.

【60】马瑾, 栾彩娜 and 肖洪地.Electrical and optical characterizations of b-Ga2O3:Sn films deposited on MgO (110) substrate by MOCVDRSC advances,2014.

【61】马瑾.Twin structures of epitaxial SnO2 films grown on a-cut sapphire by metalorganic chemical vapor depositionJournal of Vacuum Science and Technology A,2012.

【62】马瑾, 栾彩娜 and 冯先进.Preparation and characterization of single crystalline In2O3 films deposited on MgO(110) substrates by MOCVD. Ceramics International, 40,2014.

【63】马瑾 and 栾彩娜.Structural and optical properties of single crystalline columbite tin oxide film. APPLIED PHYSICS LETTERS, 98:261904-1,2011.

【64】马瑾.Synthesis of orthorhombic structure epitaxial tin oxide film. Materials letters, 64:1350,2010.

【65】冯先进, 肖洪地, 栾彩娜, 马瑾 and 赵伟.Deposition and characterization of epitaxial Ta-doped TiO2 films for ultraviolet photoelectric detectors. Ceramics International, 44:21114,2018.

【66】马瑾, 冯先进, 肖洪地 and 栾彩娜.Structural and optical properties of anatase TiO2 heteroepitaxial films prepared by MOCVDJournal of crystal growth,2016.

【67】栾彩娜 and 马瑾.Characterization of tunable band gap aluminum indium oxide films prepared on SiO2 (0001) by MOCVDJournal of Materials Science: Materials in Electronics,2016.

【68】冯先进, 栾彩娜 and 马瑾.Characterization of single crystalline a-TiO2 films on MgAl2O4(100) substrates by MOCVDCeramics International,2016.

【69】马瑾 and 冯先进.Preparation and characterization of ternary Al–In–O films on Y-stabilized ZrO2 substrates. Materials letters, 161:68,2015.

【70】栾彩娜, 冯先进 and 马瑾.Structure and Optical Properties of Epitaxial Indium Oxide Films Deposited on Y-Stabilized ZrO2 (111) by MOCVDJournal of ELECTRONIC MATERIALS,2015.

【71】冀子武, 马瑾 and 肖洪地.Porosity-induced relaxation of strains at different depth of nanoporous GaN stuided using the Z-scan of Raman spectroscopy. JOURNAL OF ALLOYS AND COMPOUNDS, 626:154,2015.

【72】冯先进 and 马瑾.Synthesis and characterization of structural and optical properties of heteroepitaxial brookite TiO2 single crystalline filmsSCRIPTA MATER,2016.

【73】马瑾 and 栾彩娜.Preparation and characterization of single crystalline SnO2 films deposited on TiO2(0 0 1) by MOCVD. Journal of crystal growth, 318:599,2011.

【74】刘建强, 马瑾, 肖洪地 and 崔积适.Porosity-induced weakening of piezoresponse in GaN layers by means of piezoelectric force microscopy. Materials letters, 208:31,2017.

【75】冯先进, 栾彩娜 and 马瑾.Characterization of single crystalline a-TiO2 films on MgAl2O4(100) substrates by MOCVDCeramics International,2016.

【76】冯先进 and 马瑾.Preparation and characterization of single crystalline anatase TiO2 films on LSAT (001) by MOCVDRSC ADV,2016.

【77】冯先进, 栾彩娜 and 马瑾.Preparation and characterization of single crystalline anatase TiO2 epitaxial films on LaAlO3(001) substrates by metal organic chemicalSCRIPTA MATERIALIA,2016.

【78】冯先进 and 马瑾.Synthesis and characterization of structural and optical properties of heteroepitaxial brookite TiO2 single crystalline filmsSCRIPTA MATER,2016.

【79】冯先进, 肖洪地, 栾彩娜 and 马瑾.Structural and optical properties of anatase TiO2 heteroepitaxial films prepared by MOCVDJournal of crystal growth,2016.

【80】栾彩娜 and 马瑾.Characterization of tunable band gap aluminum indium oxide films prepared on SiO2 (0001) by MOCVDJournal of Materials Science: Materials in Electronics,2016.

【81】冯先进 and 马瑾.Effect of thermal annealing on the optical and structural properties of γ-Al2O3 films prepared on MgO substrates by MOCVDCeramics International,2016.

【82】栾彩娜, 冯先进 and 马瑾.Structure and Optical Properties of Epitaxial Indium Oxide Films Deposited on Y-Stabilized ZrO2 (111) by MOCVDJournal of ELECTRONIC MATERIALS,2015.

【83】冯先进, 栾彩娜, 马瑾 and 何林安.Structural, optical and electrical properties of epitaxial rutile SnO2 films grown on MgF2 (110) substrates by MOCVD. Ceramics International, 44:869,2018.

【84】冯先进, 栾彩娜, 马瑾 and 赵伟.Preparation and characterization of transparent indium- doped TiO2 films deposited by MOCVD. Ceramics International, 43:8391,2017.

【85】刘建强, 马瑾 and 肖洪地.Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties . Applied surface science, 387 :406,2016.

【86】冯先进, 栾彩娜, 马瑾 and 王伟广.Effects of deposition temperature on the structural and optical properties of single crystalline rutile TiO2 films. Materials Chemistry and Physics, 211:172,2018.

【87】栾彩娜, 冯先进, 马瑾 and 赵伟.Characterization of niobium-doped titania epitaxial films deposited by metalorganic chemical vapor deposition. Materials Characterization, 137:263,2018.

【88】栾彩娜, 冯先进, 马瑾 and 何林安.Characterization of Rutile SnO2 Epitaxial Films Grown on MgF2 (001) Substrates by MOCVD. Crystal Research and Technology, 53,2018.

【89】冯先进, 马瑾 and 王伟广.Epitaxial growth and properties of Nb-doped anatase TiO2 films on LSAT by MOCVD. JOURNAL OF ALLOYS AND COMPOUNDS, 729:38,2017.

【90】冯先进, 马瑾 and 赵伟.Structural and optical properties of heteroepitaxial anatase titania films on MgAl6O10 (100) substrates by MOCVD. Applied surface science, 426:369,2017.

【91】冯先进, 肖洪地, 栾彩娜, 马瑾 and 赵伟.Deposition and characterization of epitaxial Ta-doped TiO2 films for ultraviolet photoelectric detectors. Ceramics International, 44:21114,2018.

【92】栾彩娜, 马瑾, 肖洪地 and 曹得重.Fabrication and properties of high quality InGaN-based LEDs with highly reflective nanoporous GaN mirrors. Photonics research, 6:1144,2018.

【93】肖洪地, 冯先进, 马瑾 and 曹琼.beta-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD. Materials Science in Semiconductor Processing, 77:58,2018.

【94】冯先进, 马瑾 and 王伟广.Structural, electrical and optical properties of In doped brookite TiO2 thin films deposited on YSZ (110) substrates by MOCVD. JOURNAL OF ALLOYS AND COMPOUNDS, 708:1195,2017.

【95】冯先进, 马瑾 and 杜学舰.Effect of Sn content on the structural and photoelectric properties of IATO films. journal of materials science, 52:367,2017.

【96】冯先进, 肖洪地, 马瑾 and 曹琼.Effect of annealing on the structural and optical properties of beta-Ga2O3 films prepared on gadolinium gallium garnet (110) by MOCVD. Ceramics International, 44:830,2018.

【97】冯先进, 栾彩娜, 肖洪地, 马瑾 and 赵伟.Heteroepitaxial growth and characterization of monocrystal anatase TiO2 films on epi-GaN (0001)/sapphire substrates. journal of materials science, 52:1082,2017.

【98】栾彩娜, 冯先进, 肖洪地, 马瑾 and 何林安.Effect of niobium doping on the structural, electrical and optical properties of epitaxial SnO2 films on MgF2 (110) substrates by MOCVD. JOURNAL OF ALLOYS AND COMPOUNDS, 741:677,2018.

【99】冯先进, 栾彩娜, 马瑾 and 赵伟.Structural, electrical and optical properties of epitaxial Ta-doped titania films by MOCVD. CrystEngComm, 20:5395,2018.

【100】宗福建, 马瑾 and 郝晓涛.Performance improvement of TiO2/Ag/TiO2 multilayer transparent conducting electrode films for application on photodetectorsJournal of Physics D-Applied Physic,2016.

【101】马瑾 and 栾彩娜.Structural and electrical properties of SnO2 films grown on r-cut sapphire at different substrate temperature by MOCVD. Vacuum, 99:110,2014.

【102】冯先进, 栾彩娜, 马瑾 and 王伟广.Effect of Nb doping on structural and electrical properties of homoepitaxial rutile TiO2:Nb films. Ceramics International, 44:2432,2018.

【103】马瑾 and 冯先进.Structural, optical and electrical properties of ternary Al2xIn2？2xO3 films prepared by MOCVD. Journal of crystal growth, 422:24,2015.

【104】马瑾 and 冯先进.Ternary Al2xIn2？2xO3 films with tunable optical band gap prepared on YSZ (1 0 0) substrates by metal organic chemical vapor deposition. JOURNAL OF ALLOYS AND COMPOUNDS, 637:257,2015.

【105】马瑾, 于新好 and 栾彩娜.Synthesis and properties of epitaxial SnO2 films deposited on MgO (100) by MOCVD. Vacuum, 86:1333,2012.

【106】马瑾 and 栾彩娜.Preparation and characterization of single crystalline SnO2 films deposited on TiO2(0 0 1) by MOCVD. Journal of crystal growth, 318:599,2011.

【107】栾彩娜 and 马瑾.Heteroepitaxy of SnO2 thin filmson m-plane sapphire by MOCVD. Journal of crystal growth, 324:98,2011.

【108】栾彩娜 and 马瑾.Domain structure and optical property of epitaxial indium oxide film deposited on MgO(100) substrate. Surface Science, 605:977,2011.

【109】栾彩娜 and 马瑾.Epitaxial relationships and optical properties of SnO2 films deposited on sapphire substrates. Applied surface science, 257:2516,2011.

【110】栾彩娜 and 马瑾.Structure and photoluminescence properties of epitaxial SnO2 films grown on alpha-Al2O3 (012) by MOCVD. Journal of Luminescence, 131:88,2011.

【111】马瑾.Structural,electrical and optical properties of SnO2 films deposited on Y-stabilized ZrO2 (1 00) substrates by MOCVD. Journal of crystal growth, 312:2931,2010.

【112】马瑾.Synthesis of orthorhombic structure epitaxial tin oxide film. Materials letters, 64:1350,2010.

【113】马瑾. Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD. Applied surface science, 257:518,2010.

【114】马瑾.Structural and photoluminescence properties of single-crystalline In2O3 films grown by metal organic vapor deposition. Journal of crystal growth, 310:4054,2008.

【115】马瑾.Structural and photoluminescence properties of single crystalline SnO2 : In films deposited on alpha-Al2O3 (0001) by MOCVD. Journal of crystal growth, 310:3718,2008.

【116】马瑾. Highly thermal stable transparent conducting SnO2 : Sb epitaxial films prepared on alpha-Al2O3 (0001) by MOCVD. Applied surface science, 254:6601,2008.

【117】栾彩娜, 冯先进 and 马瑾.Preparation and characterization of single crystalline In2O3 films deposited on MgO(110) substrates by MOCVD. Ceramics International, 40,2014.

【118】栾彩娜 and 马瑾.Characterizationofhomoepitaxial β-Ga2O3 films prepared by metal–organic chemical vapor deposition. Journal of crystal growth, 404:75,2014.

【119】栾彩娜, 肖洪地 and 马瑾.Electrical and optical characterizations of b-Ga2O3:Sn films deposited on MgO (110) substrate by MOCVDRSC advances,2014.

【120】栾彩娜, 肖洪地 and 马瑾.Structural and opticalproperties of β-Ga2O3 films deposited on MgAl2O4 (1 00) substrates by metal–organic chemical vapor deposition . Journal of Luminescence, 146:1,2014.

【121】栾彩娜 and 马瑾.Synthesis of monoclinic structure gallium oxide epitaxial film on MgAl6O10 (100)Materials letters,2013.

【122】栾彩娜 and 马瑾.Ultraviolet–green photoluminescence of β-Ga2O3 films deposited on MgAl6O10 (1 0 0) substrateOptical Materials,2013.

【123】马瑾.Twin structures of epitaxial SnO2 films grown on a-cut sapphire by metalorganic chemical vapor depositionJournal of Vacuum Science and Technology A,2012.