【1】李玲.沟道层带尾态密度和厚度对 ａ － ＩＧＺＯ 薄膜晶体管 特性影响的数值仿真《微电子学与计算机》,2022.

【2】孟令国.Learning Attention-Aware Interactive Features for Fine-Grained Vegetable and Fruit Classification. Applied Sciences-Basel, 11,2021.

【3】李玲, 孟令国, 王福勋 and 王永.Synthesis and optical characterization of In3+-stabilized gamma-Bi2O3 sillenite semiconductor with cation deficiency. Materials Science in Semiconductor Processing, 68:48,2017.

【4】孟令国 and 邢建平.Simulations of Breakdown Voltage of Coplanar Electrodes Microplasma Devices. IEEE Transactions on plasma science, 41:12,2013.

【5】林兆军 and 孟令国.A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics . Chinese Physics B, 21:097104,2012.

【6】蒋然, 孟令国 and 张锡健.Atomic layer deposition of an Al2O3 dielectric on ultrathin graphit by using electron beam irradiation. Journal of Semiconductors, 33:093004-1,2012.

【7】林兆军 and 孟令国.Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts. Chinese Physic B, 20:047105-1,2011.

【8】林兆军 and 孟令国.Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors . Nanoscale research letters, 7:434,2012.

【9】林兆军 and 孟令国.Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors. Journal of applied physics, 112:054513,2012.

【10】林兆军 and 孟令国.Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors . Applied physics letters, 101:113501,2012.

【11】孟令国, 林兆军 and 邢建平.Multi-discharge phenomenon in coplanar electrodes microplasma devices. Eur. Phys. J. D, 60:575,2010.

【12】孟令国, 邢建平 and 林兆军.Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon. APPLIED PHYSICS LETTERS, 96:191501,2010.

【13】林兆军 and 孟令国.Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures. Journal of Semiconductors, 31:084007-1,2010.

【14】林兆军 and 孟令国.Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts. Chinese Physics B, 20:097106 -1,2011.

【15】林兆军 and 孟令国.Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics. Journal of applied physics, 109:074512-1,2011.

【16】林兆军 and 孟令国.Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics. Applied physics letters, 99:123504,2011.

【17】林兆军 and 孟令国.Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. Applied physics letters, 98:123512-1,2011.

【18】孟令国 and 林兆军.A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics . Chinese Physics B, 21:097104,2012.

【19】孟令国, 张锡健 and 蒋然.Atomic layer deposition of an Al2O3 dielectric on ultrathin graphit by using electron beam irradiation. Journal of Semiconductors, 33:093004-1,2012.

【20】孟令国 and 林兆军.Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts. Chinese Physic B, 20:047105-1,2011.

【21】孟令国 and 林兆军.Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors . Nanoscale research letters, 7:434,2012.

【22】孟令国 and 林兆军.Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors. Journal of applied physics, 112:054513,2012.

【23】孟令国 and 林兆军.Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors . Applied physics letters, 101:113501,2012.

【24】孟令国 and 林兆军.Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures. Journal of Semiconductors, 31:084007-1,2010.

【25】孟令国 and 林兆军.Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts. Chinese Physics B, 20:097106 -1,2011.

【26】孟令国 and 林兆军.Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics. Journal of applied physics, 109:074512-1,2011.

【27】孟令国 and 林兆军.Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics. Applied physics letters, 99:123504,2011.

【28】孟令国 and 林兆军.Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. Applied physics letters, 98:123512-1,2011.

【29】孟令国 and 林兆军.Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures. Journal of Semiconductors, 31:084007-1,2010.

【30】孟令国 and 林兆军.Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts. Chinese Physics B, 20:097106 -1,2011.

【31】孟令国 and 林兆军.Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts. Chinese Physic B, 20:047105-1,2011.

【32】孟令国 and 林兆军.Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics. Journal of applied physics, 109:074512-1,2011.

【33】孟令国 and 林兆军.Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics. Applied physics letters, 99:123504,2011.

【34】孟令国 and 林兆军.Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. Applied physics letters, 98:123512-1,2011.

【35】孟令国 and 林兆军.Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors . Applied physics letters, 101:113501,2012.

【36】孟令国 and 林兆军.Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors . Nanoscale research letters, 7:434,2012.

【37】孟令国 and 林兆军.Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors. Journal of applied physics, 112:054513,2012.

【38】孟令国 and 林兆军.A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics . Chinese Physics B, 21:097104,2012.

【39】孟令国, 张锡健 and 蒋然.Atomic layer deposition of an Al2O3 dielectric on ultrathin graphit by using electron beam irradiation. Journal of Semiconductors, 33:093004-1,2012.

【40】孟令国, 王福勋, 王永 and 李玲.Synthesis and optical characterization of In3+-stabilized gamma-Bi2O3 sillenite semiconductor with cation deficiency. Materials Science in Semiconductor Processing, 68:48,2017.

【41】邢建平 and 孟令国.Simulations of Breakdown Voltage of Coplanar Electrodes Microplasma Devices. IEEE Transactions on plasma science, 41:12,2013.

【42】邢建平, 林兆军 and 孟令国.Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon . Applied physics letters, 96:191501-1,2010.

【43】林兆军, 邢建平 and 孟令国.Multi-discharge phenomenon in coplanar electrodes microplasma devices. Eur. Phys. J. D, 60:575,2010.

【1】学科融合电工电子大类实验教学与创新教育综合平台建设