【1】.Graphene-Tuned, Tightly Coupled Hybrid Plasmonic Meta-Atoms. Nanomaterials , 14,2024.

【2】韩鹤程.Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction. 纳米快报, 24:8602,2024.

【3】.Toward High-Peak-to-Valley-Ratio Graphene Resonant Tunneling Diodes. Nano Letters, 23:8132,2023.

【4】.A Universal Approach to Determine the Atomic Layer Numbers in Two-Dimensional Materials Using Dark-Field Optical Contrast. Nano Letters, 23:9170,2023.

【5】王萌发.Frequency Division Multiplexer With Directional Filters in Multilayer LCP Films at - and -Band. 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》, 32:1287,2022.

【6】.Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate DimensionsIEEE Transactions on Electron Devices:1377,2018.

【7】.Narrowband SIW-SSPP Hybrid Bandpass Filter With Compact Profile at Ka-BandNarrowband SIW-SSPP Hybrid Bandpass Filter With Compact Profile at Ka-Band. IEEE Access1, 11:98305,2023.

【8】.Polarization-selective modulation of meandered-line metamaterials with graphene surface plasmonicsOptics and Lasers in Engineering:107693,2023.

【9】.Polarization-selective modulation of meandered-line metamaterials with graphene surface plasmonicsOptics and Lasers in Engineering:107693,2023.

【10】.Narrowband SIW-SSPP hybrid Bandpass Filter with Compact Profile at Ka-bandIEEE ACCESS:98305,2023.

【11】冯明明.Active metal-graphene hybrid terahertz surface plasmon polaritons. NANOPHOTONICS, 11:3331-3338,2022.

【12】王萌发.Frequency Division Multiplexer With Directional Filters in Multilayer LCP Films at E- and W-Band《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》,2022.

【13】张翼飞.Tunable Surface Plasmon Polaritons with Monolithic Schottky DiodesACS Applied Electronic Materials:2124,2019.

【14】周泽鹏.Flexible Liquid Crystal Polymer Technologies from Microwave to Terahertz Frequencies. Molecules, 27,2022.

【15】王震泽.Comparative Study of Short-Channel Effects Between Source-Gated Transistors and Standard Thin-Film TransistorsIEEE Transactions on Electron Devices,2022.

【16】袁玉卓.Imaging Array and Complementary Photosensitive Inverter Based on P-Type SnO Thin-Film Phototransistors. IEEE Electron Device Letters, 42:1010,2021.

【17】颜世琪.High-Performance Thin-Film IGZO Schottky Diodes With Sputtered PdOx Anode. IEEE Transactions on Electron Devices, 68:4444,2021.

【18】马鹏飞.Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35,2020.

【19】李云鹏.Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 24:208,2018.

【20】张翼飞.Multi frequency multi bit amplitude modulation of spoof surface plasmon polaritons by schottky diode bridged interdigital SRRsScientific Reports,2021.

【21】凌昊天.Active terahertz metamaterials electrically modulated by InGaZnO Schottky diodes. Optical Materials Express, 11:2966,2021.

【22】李虎.Photoluminescent Semiconducting Graphene Nanoribbons via Longitudinally Unzipping Single-Walled Carbon NanotubesACS Applied Materials & Interfaces,2021.

【23】张嘉炜.Extremely high-gain source-gated transistors. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 116:4843,2019.

【24】袁玉卓.Thin Film Sequential Circuits: Flip-Flops and a Counter Based on p-SnO and n-InGaZnO. IEEE Electron Device Letters, 42:62,2021.

【25】袁玉卓.SnOX-Based mu W-Power Dual-Gate Ion-Sensitive Thin-Film Transistors With Linear Dependence of pH Values on Drain Current. IEEE Electron Device Letters, 42:54,2021.

【26】凌昊天.Spoof surface plasmon polariton band-stop filter with single-loop split ring resonators. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 30,2020.

【27】赵帅.In Situ Growth of GeS Nanowires with Sulfur-Rich Shell for Featured Negative Photoconductivity. Journal of Physical Chemistry Letters, 12:3046,2021.

【28】马鹏飞.Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35,2020.

【29】xinqian, Yiming Wang, Zhou Li, wangqingpu, Song A M and 杨进.Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO with High Uniformity. IEEE Electron Device Letters, 32:516,2018.

【30】Philip Zhang, Song A M, shiyanpeng, Yiming Wang, Hua Yu Feng, xinqian, wangqingpu and 张翼飞.Tunable Surface Plasmon Polaritons with Monolithic Schottky DiodesACS Applied Electronic Materials,2019.

【31】Yiming Wang, Feng Xianjin, Song A M and 朱庚昌.Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation. APPLIED PHYSICS LETTERS, 109:113503,2016.

【32】xinqian, Song A M, Yiming Wang, Shi Yanpeng, Philip Zhang and 辛倩.Schottky-barrier thin-film transistors based on HfO2-capped InSe. APPLIED PHYSICS LETTERS, 115,2019.

【33】Yiming Wang, xinqian, xumingsheng, chenxiufang, xuxiangang, Feng Xianjin, Song A M and 朱庚昌.GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric. Semiconductor Science and Technology, 33,2018.

【34】Song A M, Yiming Wang, wangqingpu, Zhou Li, xinqian and 杨进.All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory. IEEE Electron Device Letters, 39:1876,2018.

【35】Yiming Wang, xinqian, Song A M, Shi Yanpeng, Li Yuxiang and wangqingpu.Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions. IEEE Transactions on Electron Devices, 65:1377,2018.

【36】Yiming Wang, yangzaixing, xinqian, Song A M and 梁广大.Improved performance of InSe field-effect transistors by channel encapsulation. Semiconductor Science and Technology, 33,2018.

【37】Song A M, Yiming Wang, linzhaojun, Zhou Li, xinqian and liyunpeng.Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 39:208,2017.

【38】xinqian, Yiming Wang, Zhou Li, wangqingpu, Song A M and 杨进.Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity. IEEE Electron Device Letters, 39:516,2018.

【39】Yiming Wang, wangqingpu, xinqian, hanlin, Song A M and 王汉斌.A Novel Thermally Evaporated Etching Mask for Low-Damage Dry Etching. IEEE Transactions on Nanotechnology, 16:290,2017.

【40】liudesheng, Yiming Wang, Kun GAO and 刘德胜.F-substituent on the photoswitchable performance of diarylethenes《物理学报》,2008.

【41】liudesheng, Yiming Wang and 刘德胜.First-principles study of the switching characteristics of the phenoxynaphthacenequinone-based optical molecular switch with carbon nanotube electrodes. Physica E, 41:474,2009.

【42】xinqian, Yiming Wang, Zhou Li, wangqingpu, Song A M and 袁玉卓.Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption. IEEE Electron Device Letters, 39:1676,2018.

【43】Yiming Wang, xinqian, Li Yuxiang, Song A M and 马鹏飞.Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric. APPLIED PHYSICS LETTERS, 112,2018.

【44】Yiming Wang, xinqian, Li Yuxiang, Song A M and 马鹏飞.High-Performance InGaZnO-Based ReRAMs. IEEE Transactions on Electron Devices, 66:2600,2019.

【45】xinqian, Yiming Wang, Zhou Li, wangqingpu, Song A M and 杨进.Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity. IEEE Electron Device Letters, 39:516,2018.

【46】Yiming Wang, Kun GAO and 刘德胜.F-substituent on the photoswitchable performance of diarylethenes《物理学报》,2008.

【47】Yiming Wang and 刘德胜.First-principles study of the switching characteristics of the phenoxynaphthacenequinone-based optical molecular switch with carbon nanotube electrodes. Physica E, 41:474,2009.

【48】Song A M, Yiming Wang, Shi Yanpeng, Philip Zhang and 辛倩.Schottky-barrier thin-film transistors based on HfO2-capped InSeApplied physics letters,2019.

【49】Yiming Wang, Feng Xianjin, Song A M and 朱庚昌.Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation. Applied physics letters, 109:113503,2016.

【50】Yiming Wang, wangqingpu, xinqian, hanlin, Song A M and 王汉斌.A Novel Thermally Evaporated Etching Mask for Low-Damage Dry Etching. IEEE Transactions on Nanotechnology, 16:290,2017.

【51】Yiming Wang, xinqian, xumingsheng, chenxiufang, xuxiangang, Feng Xianjin, Song A M and 朱庚昌.GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric. Semiconductor Science and Technology, 33,2018.

【52】Yiming Wang, xinqian, Li Yuxiang, Song A M and 马鹏飞.High-Performance InGaZnO-Based ReRAMs. IEEE Transactions on Electron Devices, 66:2600,2019.

【53】xinqian, Yiming Wang, Zhou Li, wangqingpu, Song A M and 袁玉卓.Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption. IEEE Electron Device Letters, 39:1676,2018.

【54】Song A M, Yiming Wang, wangqingpu, Zhou Li, xinqian and 杨进.All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory. IEEE Electron Device Letters, 39:1876,2018.

【55】Yiming Wang and 刘德胜.First-principles study of the switching characteristics of the phenoxynaphthacenequinone-based optical molecular switch with carbon nanotube electrodes. Physica E, 41:474,2009.

【56】Yiming Wang, Kun GAO and 刘德胜.F-substituent on the photoswitchable performance of diarylethenes《物理学报》,2008.

【57】Yiming Wang, xinqian, Li Yuxiang, Song A M and 马鹏飞.Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric. Applied physics letters, 112,2018.

【58】Song A M, Yiming Wang, linzhaojun, Zhou Li, xinqian and liyunpeng.Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 39:208,2018.

【59】xinqian, Yiming Wang, Zhou Li, wangqingpu, Song A M and 杨进.Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity. IEEE Electron Device Letters, 39:516,2018.

【60】yangzaixing, xinqian, Song A M and 梁广大.Improved performance of InSe field-effect transistors by channel encapsulation. Semiconductor Science and Technology, 33,2018.

【61】xinqian, Song A M, Shi Yanpeng, Li Yuxiang, wangqingpu and Yiming Wang.Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions. IEEE Transactions on Electron Devices, 65:1377,2018.

【1】物理基地《力热学实验课改革成果》