教育经历
  • 2010-09 — 2014-06
    山东大学
    集成电路设计与集成系统
    工学学士学位
  • 2014-09 — 2019-06
    山东大学
    电子科学与技术
    工学博士学位
工作经历
  • 2019-09 — 2022-03
     东京大学 
    博士后研究员
研究方向

1.面向存算一体单片3D集成的新型纳米器件研究

论文成果

(1) Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs.MICROMACHINES.2025,16 (2)

(2) Zirconium-Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back-End-of-Line-Compatible Ferroelectric Random Access Memory.Advanced Science.2025

(3) Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1？xO2 ferroelectric film.SCIENCE CHINA-Information Sciences.2025,68 (6)

(4) 李晓鹏.Comprehensive Analysis of Oxidant Effects During ALD Process of Hf0.5Zr0.5O2 Ferroelectric Thin Films.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY.2025

(5) 李晓鹏.Imprint-Correlated Retention Loss in Hf0.5Zr0.5O2 Ferroelectric Thin Film Through Wide-Temperature Characterizations.IEEE Transactions on Electron Devices.2024,71 (9):5361-5366

(6) Mechanisms for enhanced ferroelectric properties in ultra-thin Hf0.5Zr0.5O2 film under low-temperature, long-term annealing.APPLIED PHYSICS LETTERS.2024,125 (9)

(7) 台路.Silicon Atomic-Layer Doped Hf $_{\text{0.7}}$ Zr $_{\text{0.3}}$ O $_{\text{2}}$ Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance ( ${>}\text{10}^{\text{12}}$ Cycles).IEEE Transactions on Electron Devices.2024 :1-4

(8) 李晓鹏.In-Depth Investigation of Seed Layer Engineering in Ferroelectric Hf0.5Zr0.5O2 Film: Wakeup-Free Achievement and Reliability Mechanisms.IEEE Transactions on Electron Devices.2024

(9) 程永豪.First-Principles Predictions of Monolayer Violet Phosphorene for Nanoscale Field-Effect Transistor Applications.ACS Applied Electronic Materials.2025 (7)

(10) 桑鹏鹏.Toward high-performance monolayer graphdiyne transistor: Strain engineering matters.Applied Surface Science.2021 (536)

(11) 桑鹏鹏.Van der Waals Heterostructure Contact Strategy for Barrier-Free 2D Complementary Transistors.Advanced functional materials.2024 (34)

(12) 桑鹏鹏.A Computational Study on Electrical Contacts in Monolayer hhk-Si Field-Effect Transistors.IEEE Transactions on Electron Devices.2025 (72)

(13) 桑鹏鹏.an der Waals heterostructure contact strategy for barrier-free 2D complementary transistors.Advanced Functional Materials.2024 (34)

(14) 窦小禹.Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation.APPLIED PHYSICS LETTERS.2024,124 (9)

(15) 汪倩文.P-type cold-source field-effect transistors with TcX2 and ReX2 (X= S, Se) cold source electrodes: A computational study.Chinese Physics B.2023 (32)

(16) 冯扬.Optimized operation scheme of flash-memory-based neural network online training with ultra-high endurance.Journal of Semiconductors.2024,45 (1)

(17) 方晓彤.High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data Storage.IEEE Transactions on CAD of Integrated Circuits and Systems (TCAD).2023,42 (10):3224

(18) 齐悦冉.An Efficient and Robust Partial Differential Equation Solver by Flash-Based Computing in Memory.MICROMACHINES.2023,14 (5)

(19) 冯扬.Fully Flash-Based Reservoir Computing Network With Low Power and Rich States.IEEE Transactions on Electron Devices.2023

(20) 桑鹏鹏.Tunable electrical contacts in two-dimensional silicon field-effect transistors: The significance of surface engineering.2023,614

(21) 陈博.Sub-10 nm HfZrO ferroelectric synapse with multiple layers and different ratios for neuromorphic computing.Nanotechnology.2023,34 (50)

(22) 台路.Toward Low-Thermal-Budget Processing in Ferroelectric Hf0.5Zr0.5O2 Thin Films by Ozone Interface Oxidation.IEEE Electron Device Letters.2023,44 (12):1959-1962

(23) 台路.Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf 0.5 Zr 0.5 O 2 Films.IEEE Electron Device Letters.2023 (44（5）):1

(24) 李晓鹏.Temperature-dependent Defect Behaviors in Ferroelectric Hf0.5Zr0.5O2 Thin Film: Re-wakeup Phenomenon and Underlying Mechanisms.2022 International Electron Devices Meeting (IEDM).2022

(25) 唐鸣丰.Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing.IEEE Transactions on Electron Devices.2023

(26) 冯扬.Near-Threshold-Voltage Operation in Flash-based High-Precision Computing-in-Memory to Implement Poisson Image Editing.SCIENCE CHINA-Information Sciences.2023 (333)

(27) 台路.Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films.IEEE Electron Device Letters.2023,44 (5):753

(28) 桑鹏鹏.Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications.ACS Applied Nano Materials.2023,6 (8):6849

(29) 台路.Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf 0.5 Zr 0.5 O 2 Films.IEEE Electron Device Letters.2023 (44（5）)

(30) 孙朝辉.Flash-based in-memory computing for stochastic computing in image edge detection.Journal of Semiconductors.2023 (44)

(31) 李晓鹏.Re-Annealing-Induced Recovery in 7nm Hf0.5Zr0.5O2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair.IEEE Electron Device Letters.2023 (44（8）)

(32) 冯扬.A Novel Array Programming Scheme for Large Matrix Processing in Flash-Based Computing-in-Memory (CIM) With Ultrahigh Bit Density.IEEE Transactions on Electron Devices.2023 (70)

(33) 桑鹏鹏.Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications.ACS Applied Nano Materials.2023 (6（8）)

(34) 桑鹏鹏.Tunable electrical contacts in two-dimensional silicon field-effect transistors: The significance of surface engineering.Applied Surface Science.2023 (614)

(35) 赵国庆.Design-Technology Co-optimizations for Symmetric Linear Synapse Behaviors in Ferroelectric FET based Neuromorphic Computing.IEEE Transactions on Nanotechnology.2022 (21)

(36) 唐鸣丰.Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing.IEEE Transactions on Electron Devices.2023 (70)

(37) 王成城.Complementary Digital and Analog Resistive Switching Based on AlOx Monolayer Memristors for Mixed-Precision Neuromorphic Computing.IEEE Transactions on Electron Devices.2023 (70)

(38) 冯扬.Fully Flash-based Reservoir Computing Network with Low Power and Rich States.IEEE Transactions on Electron Devices.2023 (7（9）)

(39) 吴书昊.Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing.MICROELECTRONICS JOURNAL.2023 (137)

(40) 齐悦冉.An Efficient and Robust Partial Differential Equation Solver by Flash-Based Computing in Memory.MICROMACHINES.2023 (14(5))

(41) 李晓鹏.Temperature-dependent Defect Behaviors in Ferroelectric Hf0.5Zr0.5O2 Thin Film:？ Re-wakeup Phenomenon and Underlying Mechanisms.2022

(42) 赵国庆.Suppressing Interfacial Layer Degradation in Hf0.5Zr0.5O2-based FeFETs Using a Pre-erase Strategy during Program/Erase Cycling.IEEE Silicon Nanoelectronics Workshop (SNW).2022

(43) 方晓彤.High-Precision Short-Term Lifetime Prediction in TLC 3D NAND Flash Memory as Hot-data Storage.International Conference on Compilers, Architecture, and Synthesis for Embedded Systems (CASES).2022

(44) 李晓鹏.Experimental investigations on ferroelectric dielectric breakdown in sub-10 nm Hf0.5Zr0.5O2 film through comprehensive TDDB characterization.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS.2022,61 (10)

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