Affiliation of Author(s):集成电路学院
Journal:Materials Science in Semiconductor Processing
First Author:陈蓉蓉
Document Code:6E9E1B6ECCDA49DFBD33446AD41152BE
Issue:168
Page Number:107859
Number of Words:4
Translation or Not:no
Date of Publication:2023-11-01
xiaohongdi
Professor
个人简介： 工学博士，教授，主要研究方向为宽带隙半导体材料与器件。主持国家自然科学基金项目2项，山东省科技攻关、山东省自然科学基金等省部级项目8项，申请国家发明专利5项，发表SCI收录论文百余篇，他引千余次；作为第一或通讯作者在Nanoscale、Applied Surface Science、Ceramics International、Applied Physics Letters等期刊发表SCI论文70余篇；受邀担任Advanced Materials，Applied Physics Letters，Applied Surface Science 等著名期刊的审稿人；获中国电子学会优秀硕... More+
Paper Publications
High crystal quality β-Ga2O3 epitaxial films grown on porous n-GaN substrates
Release time:2024-01-10|Hits: