许玉铭
Associate Professor
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Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors
  • Affiliation of Author(s):
    数学学院
  • Journal:
    《山东大学学报》
  • First Author:
    xuyuming
  • Indexed by:
    Unit Twenty Basic Research
  • Document Code:
    lw-110351
  • Volume:
    44
  • Issue:
    6
  • Page Number:
    22
  • Translation or Not:
    no
  • Date of Publication:
    2009-06-12

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