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Growth of six inches N-type SiC single crystals with low dislocation defects

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Affiliation of Author(s):新一代半导体材料研究院

First Author:张福生

Indexed by:Unit Twenty Basic Research

Document Code:EE7FA6D125BB4712A4F1375EC47148C9

Number of Words:2928

Translation or Not:no

Date of Publication:2019-10-04

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