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一种多孔GaN导电DBR及其制备方法 授权号：ZL2019103428324 第一发明人

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Affilication of Author(s):海洋研究院

Type of Patent:发明

Application Number:202010639961.2

Number of Inventors:2

Service Invention or Not:no

Publication Date:2021-09-24

Authorization Date:2021-09-24

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