詹学鹏
个人信息Personal Information
教授 硕士生导师
性别:男
毕业院校:吉林大学
学历:研究生(博士后)
学位:博士
在职信息:在职
所在单位:信息科学与工程学院
入职时间:2019-07-01
电子邮箱:zhanxuepeng@sdu.edu.cn
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- [41] 陈飞. Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories. MICROMACHINES, 12, 2021.
- [42] 陈杰智. Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance. 2021.
- [43] 陈杰智. Design-Technology Co-Optimizations (DTCO) for General-Purpose In-Memory Computation Based on 55nm NOR Flash Technology. 2021.
- [44] 陈杰智. In-depth Understanding of Polarization Switching Kinetics in Polycrystalline Hf0.5Zr0.5O2 Ferroelectric Thin Film: A Transition from NLS to KAI. 2021.
- [45] 张栋. Implementation of Image Compression by Using High-Precision In-Memory Computing Scheme Based on NOR Flash Memory. IEEE Electron Device Letters, 42, 1603, 2021.
- [46] 冯扬. Flash memory based computing-in-memory system to solve partial differential equations. SCIENCE CHINA-Information Sciences, 64, 2021.
- [47] 魏巍. <p>Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO2</p>. Journal of Applied Physics, 131, 2022.
- [48] 詹学鹏. Voltage and Temperature Dependence of Random Telegraph Noise and Their Impacts on Random Number Generator. MICROELECTRONICS JOURNAL, 2022.
- [49] 詹学鹏. Crystallizing Amorphous Silicon Film by Using Femtosecond Laser Pulses. 2018.
- [50] 詹学鹏. Improved Crossbar Array Architecture for Compensating Interconnection Resistance: A Ferroelectric HZO-based Synapse Case. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2022.
- [51] 詹学鹏. Room temperature crystallization of amorphous silicon film by ultrashort femtosecond laser pulses. Optics & Laser Technology, 2019.
- [52] 詹学鹏. Light-induced resistive switching in Cs0.15FA0.85PbI3-XBrX perovskite-based memristors. SOLID-STATE ELECTRONICS, 2021.
- [53] 孔亚晨. Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and Solutions. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 39, 4042, 2020.
- [54] 詹学鹏. Digital and analog functionality in monolayer AlOx-based memristors with various oxidizer sources. NANOTECHNOLOGY REVIEWS, 2021.
- [55] 詹学鹏. Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors. SCIENCE CHINA Information Sciences, 2021.
- [56] 詹学鹏. Digital and analog functionality in monolayer AlOx-based memristors with various oxidizer sources. Nanotcchnology, 32, 2021.
- [57] 张世节. In Situ Liquid-Phase Growth Strategies of g-C3N4 Solar-Driven Heterogeneous Catalysts for Environmental Applications. Solar RRL, 5, 2021.
- [58] 李元. Toward high-performance monolayer graphdiyne transistor: Strain engineering matters. Applied Surface Science, 147836, 2020.
- [59] 王菲. Lateral charge migration induced abnormal read disturb in 3D charge-trapping NAND flash memory. Applied Physics Express, 13, 2020.
- [60] 马晓雷. Impacts of extra charges on trap level modulations at cSi/aSiO(2) interface: correlations to leakage current recovery in oxide dielectric. Journal of Physics D: Applied Physics, 53, 2020.