Arokia Nathan
Professor
Visit:次
Paper Publications
Home
On a Mott formalism for modeling oxide thin-film transistors
  • Affiliation of Author(s):
    信息科学与工程学院
  • Journal:
    APPLIED PHYSICS LETTERS
  • First Author:
    伊光政
  • Document Code:
    2F1D84913D454F00AF0A13597564A717
  • Issue:
    3
  • Number of Words:
    4000
  • Translation or Not:
    no
  • Date of Publication:
    2024-07-15

Pre One:Thin-Film Transistor Digital Microfluidics Circuit Design with Capacitance-Based Droplet Sensing

Next One:On a Mott formalism for modeling oxide thin-film transistors

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University