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Prof. Chao Liu received his Ph.D. in Electrical and Computer Engineering from the Hong Kong University of Science and Technology (HKUST) in 2016. From 2016 to 2019, he was a postdoctoral researcher at the Institute of Electrical Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland. He is currently a professor at the School of Integrated Circuits, Shandong University, China.
His research interest is at the intersection of wide-bandgap semiconductors, power electronic devices, and opto-electronic devices. His group works on design and fabrication of GaN-based vertical power devices, DUV LEDs, Micro-LEDs and monolithic device integration. At EPFL, he worked on vertical GaN power devices supported by the European Horizon 2020 program. He reported the world's first GaN-on-Si vertical transistor and unveiled the possibility of integrating a vertical freewheeling Schottky barrier diode into the vertical GaN transistor. In his Ph.D. dissertation, “Monolithic integration of III-nitride devices by selective epitaxial growth”, he designed and fabricated a micro-electro-optical transceiver system with bi-directional optical communication functionality. His early research topic is related to the droop problem in blue LEDs, a long-standing impediment for the development of energy-efficient GaN LEDs. He also conducted a study of semi-polar GaN nanostructures on low-cost silicon substrates. He has co-authored over 100 papers in top-notch international journals and conferences (including APL, OL, OE, IEEE EDL, IEEE PTL, IEEE TED, ISPSD, etc). His research works have been cited over 1900 times by renowned scholars and world leading semiconductor companies as well as featured in industry magazines Compound Semiconductor, Semiconductor Today, and IEEE Spectrum. He serves as a reviewer for over 10 international journals.
Academic Experience:
2019- Professor, School of Integrated Circuits, Shandong University (SDU)
2016-2019 Scientist/post-doc in Ecole Polytechnique Fédérale de Lausanne (EPFL), advisor: Prof. Elison Matioli
2012-2016 Ph.D. in Electronic and Computer Engineering, Hong Kong University of Science and Technology (HKUST), advisior：Prof. Kei May Lau
Openings:
We are always looking for highly motivated master/PhD students, and Postdocs to work on III-Nitride semiconductors for power electronics and smart lighting applications.
The successful candidate will join the laboratory of Professor Chao Liu, and will focus on some of the following topics: MOCVD growth, simulation, cleanroom fabrication and characterization of III-Nitride materials and devices.
The candidate will have the opportunity of doing high-level research in a top-ranked engineering school, working closely with the professor as well as getting experience in building a laboratory and leading students.
Publications:
100. Hang Chen, Shuhui Zhang, Tianpeng Yang, Tingting Mi, Xiaowen Wang and Chao Liu*. Vertical Ultra-Wide Bandgap Al0.5Ga0.5N P-N Memory Diodes. IEEE Electron Device Letters, 2025
99. Ying Qi , Hang Zhou , Mengran Liu, and Chao Liu*. Alleviated Asymmetry in Carrier Transport with V-Shaped Multiple Quantum Wells in AlGaN-Based DUV LEDs. IEEE Transactions on Electron Devices, 2025
98. Mingyan Wang, Yuanjie Lv, Heng Zhou, Chao Liu, Peng Cui, Zhaojun Lin*, and Sen Huang*, Optimization of Scaling-Down Performance In Sub-100 nm AlGaN/GaN HFETSBased on Electron Velocity Modulation. IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 2025
97. Nan Gao, Yulong Fang, Bo Wang, Zhirong Zhang, Jiayun Yin, Ying Han and Chao Liu. Research on High Quality GaN Growth Based on Substrate Step Control Technology, Semiconductor Materials and Devices, 2025
96. Zenyin Dong, Yingmin Wang*, Song Zhang, He Li, Kewei Sun, Hongjuan Cheng* and Chao Liu*. Homoepitaxial growth of gallium oxide thick film by HVPE method. Journal of Synthetic Crystals, 2025
95. Hang Chen , Shuhui Zhang , Tianpeng Yang , Tingting Mi , Xiaowen Wang and Chao Liu*. 650 V Vertical Al0.51Ga0.49N Power Schottky Diodes. Applied Physics Letters, 2024
94. Hang Chen , Shuhui Zhang , Tianpeng Yang , Tingting Mi , Xiaowen Wang and Chao Liu*. 1 kV Vertical P-i-N Diodes Based on Ultra-wide Bandgap Al0.47Ga0.53N Grown by MOCVD. IEEE Electron Device Letters, 2024
93. Hang Chen , Shuhui Zhang , Tianpeng Yang , Tingting Mi , Xiaowen Wang and Chao Liu*. MOCVD Growth and Fabrication of Vertical P-i-N and Schottky Power Diodes Based on Ultra-wide Bandgap AlGaN Epitaxial Structures. International Symposium on Power Semiconductor Devices and ICs（ISPSD), Bremen, Germany, June 2-6, 2024
92. Juan Cai , Heng Wang , Jian Yin , Xuyang Liu and Chao Liu*. Design Strategy and Numerical Investigation of Vertical β-Ga2O3 Schottky Barrier Diodes with Compound Termination Extension. IEEE Transactions on Electron Devices, 2024
91. Yuchuan Ma , Heng Wang , Sihao Chen and Chao Liu*. GaN Vertical MOSFETs with Monolithically Integrated Freewheeling Merged PN-Schottky Diodes (MPS-MOS) for 1.2 kV Applications. IEEE Transactions on Electron Devices, 2024
90. Ying Qi , Wentao Tian , Yipin Gao , Shuti Li*, Chao Liu*. AlGaN-Based DUV LEDs with Al-Composition-Engineered AlGaN Superlattice Inserted at the p-EBL/Hole Supplier Interface. IEEE Transactions on Electron Devices, 2024
89. Mingyan Wang, Yuanjie Lv, Heng Zhou, Chao Liu, Peng Cui, Zhaojun Lin*, Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs. Applied Physics Letters, 2024
88. Mingyan Wang, Heng Zhou, Chao Liu, Zhaojun Lin*, Yuping Zeng*, Peng Cui*. Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs. Applied Physics Letters, 2024
87. Chunwei Zhang, Weihao Lu, Song Gao, Chao Liu and Yang Li*, A 500 V Super Field Plate LIGBT with Excellent Voltage Blocking Capability. IEEE Electron Device Letters, 2024
86. Ying Qi , Wentao Tian , Mengran Liu , Shuti Li* and Chao Liu*. Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Engineered p-AlGaN Hole Supplier Layer. IEEE Transactions on Electron Devices, 2024
85. Hongjie Shao , Yongchen Ji , Xuyang Liu , Heng Wang and Chao Liu*. Design strategy and working principle of GaN vertical trench gate MOSFETs with p-type shielding rings. Japanese Journal of Applied Physics, 2024
84. Heng Wang , Sihao Chen , Hang Chen and Chao Liu*. Design Strategies and Systematic Analysis of GaN Vertical MPS Diodes with T-Shaped Shielding Rings. Semiconductor Science and Technology, 2024
83. Yizheng Tang, Ying Qi, Yunshu Lu, Shuti Li*, and Chao Liu*. Improved hole injection for AlGaN-based DUV LEDs with graded-composition multiple quantum barrier insertion layers. Applied Optics, 2024
82. Yipin Gao, Wentao Tian, Ying Qi, Shuti Li*, and Chao Liu*. Interfacial polarization charge engineering with co-designed LQB and EBL for enhanced EQE of AlGaN DUV LEDs. Semiconductor Science and Technology, 2024
81. Hang Chen , Sihao Chen , Heng Wang , Man Hoi Wong and Chao Liu*. Design Strategy of Vertical GaN Power SBDs with p-GaN JTE and Experimental Demonstration of Selective p-Doping by Implantation. Physica Status Solidi A: Applications and Materials Science, 2024
80. Nan Gao, Yulong Fang, Bo Wang, Ying Han, Zhirong Zhang, Jiayun Yin and Chao Liu*. Research on the growth of highly doped and low dislocation p-type GaN materials. Semiconductor Materials and Devices, 2024
79. Hongjie Shao , Yongchen Ji , Xuyang Liu and Chao Liu*. GaN Vertical Trench Gate Power MOSFET with embedded p-type shielding rings beneath the gate trench. 14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov. 12-17, 2023
78. Yuchuan Ma , Heng Wang , Sihao Chen and Chao Liu*. 1.2 kV-class Vertical GaN Power MOSFETs with Monolithically Integrated Freewheeling Merged P-i-N Schottky Diodes. 14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov. 12-17, 2023
77. Wentao Tian , Mengran Liu , Shuti Li and Chao Liu*. Improved hole injection efficiency in AlGaN DUV LEDs with minimized band offset at the p-EBL/hole supplier interface. 14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov. 12-17, 2023
76. Mingyan Wang , Yuanjie Lv , Heng Zhou , Peng Cui , Chao Liu and Zhaojun Lin*. Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT. IEEE Electron Device Letters, 2023
75. Heng Zhou , Yuanjie Lv , Chao Liu , Ming Yang , Zhaojun Lin* , Yang Liu and Mingyan Wang. Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors. Solid-State Electronics, 212, 108833, 2023
74. Wentao Tian , Mengran Liu , Shuti Li and Chao Liu*. Enhanced hole injection in Ga-polar 290 nm AlGaN-based DUV LEDs with a p-n junction hole accelerator. Optical Materials Express, 2023
73. Mingyan Wang , Yuanjie Lv , Heng Zhou , Zuokai Wen , Peng Cui , Chao Liu , Zhaojun Lin*, A Hybrid Simulation Technique To Investigate Bias-dependent Electron Transport And Self-Heating In AlGaN/GaN HFETs, IEEE Transactions on Electron Devices, 2023
72. Mengran Liu, Wentao Tian, and Chao Liu*, Simultaneously improved hole injection and current uniformity in AlGaN-based deep ultraviolet light-emitting diodes, Optical Materials Express, 2023
71. Wentao Tian, Mengran Liu, Shuti Li, and Chao Liu*, Improving the hole injection efficiency in AlGaN DUV LEDs by minimizing the band offset at the p-EBL/hole supplier interface, Optical Materials Express, 2023
70. Sheng Lin, Tingjun Lin, Wenliang Wang*, Chao Liu, and Yao Ding*, High Performance GaN-Based Ultraviolet Photodetector via Te/Metal Electrodes, Materials, 16, 4569, 2023
69. Xuyang Liu, Yingbin Qiu, and Chao Liu*, Analytical Model and Design Strategy for GaN Vertical Schottky Diodes with embedded monolayer and multilayer floating islands, Compound Semiconductor Week (CSW), Jeju, Korea, May 29 - June 2, 2023
68. Yipin Gao and Chao Liu*. The influence of a low Al-composition insertion layer in p-EBL on the optical and electrical performance of DUV LEDs. Micro/nano Electronics and Intelligent Manufacturing, 2023
67. Xuyang Liu, Sihao Chen, Hang Chen, Yingbin Qiu, and Chao Liu*, Analytical Model and Design Strategy for GaN Vertical Floating Island Schottky Diodes, IEEE Transactions on Electron Devices, 69, 3079, 2022
66. Heng Wang, Sihao Chen, Hang Chen, and Chao Liu*, Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes towards Alleviated Electric Field Crowding and Efficient Carrier Injection, IEEE Journal of the Electron Devices Society, 10, 504, 2022
65. Yongchen Ji, Mengran Liu, and Chao Liu*, Alleviated built-in electric field in the active region of AlGaN deep-ultraviolet light emitting diodes with locally embedded p-i-n junctions, Applied Optics, 61, 6961, 2022
64. Mengran Liu, and Chao Liu*, Enhanced Carrier Injection in AlGaN-based Deep Ultraviolet Light-emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface, IEEE Photonics Journal, 14, 8228005, 2022
63. Jian Yin, Sihao Chen, Hang Chen, Shuti Li, Houqiang Fu*, and Chao Liu*, Design space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling, Electronics, 11, 1972, 2022
62. Congcong Deng, Fei Chen,Chao Liu,Qing Liu,Kai Chen,Can Zou,Zixuan Zhao,Yu Zhu,Xingfu Wang, Fangliang Gao*, Shuti Li*, Realization of specific localized surface plasmon resonance in Au-modified Ni nanoplasmonics for efficient detection，Applied Surface Science, 586, 152288, 2022
61. Sihao Chen, Hang Chen, Yingbin Qiu, and Chao Liu*, Systematic Design and Parametric Analysis of GaN Vertical Trench MOS Barrier Schottky Diode with p-GaN Shielding Rings, IEEE Transactions on Electron Devices, 68, 5707, 2021
60. Mengran Liu, Yongchen Ji, Hang Zhou, Changsheng Xia, Zihui Zhang, and Chao Liu*, Sheet charge engineering towards an efficient hole injection in 290 nm deep ultraviolet light-emitting diodes, IEEE Photonics Journal, 13, 8200308, 2021
59. Yu Zhang, Chao Liu, Min Zhu,Yuliang Zhang, Xinbo Zou*, A review on GaN-based two-terminal devices grown on Si substrates, Journal of Alloys and Componds, 869, 159214, 2021
58. Riyaz Abdul Khadar, Alessandro Floriduz , Chao Liu, Reza Soleimanzadeh, and Elison Matioli, Quasi-vertical GaN-on-Si reverse blocking power MOSFETs, Applied Physics Express, 14, 046503, 2021
57. Riyaz Abdul Khadar*, Chao Liu, Reza Soleimanzadeh, and Elison Matioli*, Fully-vertical GaN-on-Si power MOSFETs, IEEE Electron Device Letters, 40, 443, 2019, featured by online magazine "Semiconductor Today"
56. Chao Liu*, Riyaz Abdul Khadar, and Elison Matioli*, Vertical GaN-on-Si MOSFETs with Monolithically Integrated Freewheeling Schottky Barrier Diodes, IEEE Electron Device Letters, 39, 1034, 2018 (featured by online magazine "Semiconductor Today" on 29th, June, 2018) (The top 5 most popular papers since Jun. 2018)
55. Chao Liu*, Riyaz Abdul Khadar, and Elison Matioli*, GaN-on-Silicon Quasi-Vertical Power MOSFETs, IEEE Electron Device Letters, 39, 71, 2018 (featured by online magazine "Semiconductor Today" on 18th, January 2018) (feature article)
54. Chao Liu*, Riyaz Abdul Khadar, and Elison Matioli*, 645 V Quasi-Vertical GaN Power Transistors on silicon substrates, 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17, 2018
53. Chao Liu*, Riyaz Abdul Khadar, and Elison Matioli*, Vertical GaN-on-Si MOSFET with Monolithically Integrated Freewheeling Schottky Barrier Diode, Compound Semiconductor Week (CSW), Boston, USA, May 29 - June 1, 2018
52. Riyaz Abdul Khadar*, Chao Liu, Liyang Zhang, Peng Xiang, Kai Cheng and Elison Matioli*, 820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2, IEEE Electron Device Letters, 39, 401, 2018 (editor's pick, featured on cover)
51. Huaxing Jiang, Chao Liu, Kar Wei Ng, Chak Wah Tang, and Kei May Lau*, High Performance AlGaN/GaN/Si Power MOSHEMTs with ZrO2 Gate Dielectric, IEEE Transactions on Electron Devices, 12, 5337, 2018
50. Yuefei Cai, Xinbo Zou, Chao Liu, and Kei May Lau*, Voltage-controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters, IEEE Electron Device Letters, 39, 224, 2018 (featured by IEEE Spectrum)
49. Chao Liu, Yuefei Cai, Huaxing Jiang, and Kei May Lau*, Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy, Optics Letters, 43, 3401, 2018
48. Xing Lu*, Chao Liu, Huaxing Jiang, Xinbo Zou, and Kei May Lau, High-Performance Monolithically Integrated GaN Driving VMOSFET on LED, IEEE Electron Device Letters, 38, 752, 2017 (featured by online magazine "Semiconductor Today" 28 April 2017)
47. Jie Ren*, Chao Liu, Chak Wah Tang, Kei May Lau, and Johnny K.O. Sin, A Novel Si-GaN Monolithic Integration Technology for a High-Voltage Cascoded Diode, IEEE Electron Device Letters, 38, 501, 2017 (featured by online magazine "Semiconductor Today" on 22th, February 2017)
46. Huaxing Jiang, Chao Liu, Xing Lu, Yuying Chen, Chak Wah Tang, and Kei May Lau*, Investigation of In-situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs, IEEE Transactions on Electron Devices, 64, 832, 2017
45. Jie Ren*, Chao Liu, Yuying Chen, Chak Wah Tang, Kei May Lau, and Johnny K.O. Sin, Switching characteristics of monolithically integrated Si- GaN cascoded rectifiers, 29th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Royton Sapporo, Sapporo, Japan, May 28–June 1, 2017
44. Chao Liu, Yuefei Cai, Xinbo Zou, and Kei May Lau*, Low-leakage High-breakdown Laterally Integrated HEMT-LED via n-GaN Electrode, IEEE Photonics Technology Letter, 28, 1130, 2016 (featured by IEEE Spectrum)
43. Chao Liu, Yuefei Cai, Huaxing Jiang, and Kei May Lau*, Optimization of a common buffer platform for monolithic integration of InGaN/GaN light- emitting diodes and AlGaN/GaN high electron mobility transistors, Journal of Electronic Materials, 45, 2092, 2016
42. Xing Lu*, Chao Liu, Huaxing Jiang, Xinbo Zou, Anping Zhang, and Kei May Lau, Monolithic Integration of Enhancement-mode Vertical Driving Transistors on a Standard InGaN/GaN Light Emitting Diode Structure, Applied Physics Letters, 109, 053504, 2016
41. Xing Lu*, Chao Liu, Huaxing Jiang, Xinbo Zou, Anping Zhang, and Kei May Lau, Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate, Applied Physics Express, 9, 031001, 2016 (featured by online magazine "Compound Semiconductor" in Vol. 22, issue, 3, April/May, 2016)
40. Xing Lu, Huaxing Jiang, Chao Liu, Xinbo Zou, and Kei May Lau*, Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing, Semiconductor Science and Technology, a31, 055019, 2016
39. Huaxing Jiang, Xing Lu, Chao Liu, and Kei May Lau, Off‐state drain leakage reduction by post metallization annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Si, Physica status solidi (a), 213, 868, 2016
38. Yuefei Cai, Xinbo Zou, Chao Liu, and Kei May Lau, Voltage-Controlled Light Modulation Enabled by Monolithically Integrated HEMT-LED Device, International workshop on Nitride Semiconductors (IWN 2016), Orlando, USA, October 2-7, 2016
37. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau*, High Voltage Low Current Collapse AlGaN/GaN MISHEMTs with in-situ SiN Gate Dielectric, Compound Semiconductor Week (CSW), Toyama, Japan, Jun 26-30, 2016
36. Tongde Huang*, Chao Liu, Johan Bergsten, Huaxing Jiang, Kei May Lau, and Niklas Rorsman, Fabrication and Improved Performance of AlGaN/GaN HEMTs with Regrown Ohmic Contacts and Passivation-First Process, Compound Semiconductor Week (CSW), Toyama, Japan, Jun 26-30, 2016
35. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau*, Effective suppression of Current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation, International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH), Miami, Florida, USA, May 16-19, 2016
34. Kun Yu, Chao Liu, Huaxing Jiang, Xing Lu, Kei May Lau, and Anping Zhang, Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs, International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), Miami, Florida, USA, May 16-19, 2016
33. Chao Liu, Huaxing Jiang, Yuefei Cai, and Kei May Lau*, Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects, Compound Semiconductor Week (CSW), Toyama, Japan, Jun 26-30, 2016
32. Xing Lu, Huaxing Jiang, Chao Liu, and Kei May Lau, Improved performance of AlGaN/GaN HEMTs by O2-plasma and HCl surface treatment, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015
31. Xing Lu, Jun Ma, Huaxing Jiang, Chao Liu, Peiqiang Xu and Kei May Lau*, Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric, IEEE Transactions on Electron Devices, 62, 1862, 2015
30. Huaxing Jiang, Xing Lu, Chao Liu, and Kei May Lau, Off-state Drain Leakage Reduction by Post Metallization Annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Silicon, Compound Semiconductor Week (CSW), Santa Barbara, California, USA, June 2015
29. Chao Liu, Yuefei Cai, and Kei May Lau*, Enhanced optical performance of monolithically integrated HEMT-LED by buffer optimization, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015
28. Chao Liu, Yuefei Cai, Zhaojun Liu, Jun Ma, and Kei May Lau*, Buffer optimization of monolithically integrated HEMT-LED using a metal- interconnection-free scheme, 57th Electronic Materials Conference (EMC),Columbus, Ohio, USA, Jun 24-26, 2015
27. Chao Liu, Yuefei Cai, Zhaojun Liu, Jun Ma, and Kei May Lau*, Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors, Applied Physics Letters, 106, 181110, 2015 (featured by online magazine "Semiconductor Today" on 20th, May 2015) (Influential Papers picked by editor, July, 2015)
26. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau, Control of threshold voltage in ultrathin-barrier AlGaN/GaN based MISHEMTs with low-frequency SiNx gate dielectric and Al2O3 interfacial layer, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015
25. Jie Ren, Chao Liu, Kei May Lau, and Johnny K. O. Sin, Effect of high-temperature thermal treatment on AlGaN/GaN HEMT Epi for monolithic integration, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015
24. Chao Liu, Zhaojun Liu, Tongde Huang, Jun Ma, and Kei May Lau*, Improved breakdown characteristics of monolithically integrated III-nitride HEMT- LED devices using carbon doping, Journal of Crystal Growth, 414, 243, 2015
23. Chao Liu, Zhiwei Ren, Xin Chen, Bijun Zhao, Xingfu Wang, Shuti Li*, Reduced droop effect in nitride light emitting diodes by taper shaped electron blocking layer, IEEE Photonics Technology Letters, 26,1368, 2014
22. Chao Liu, Zhiwei Ren, Xin Chen, Bijun Zhao, Xingfu Wang, Yian Yin, Shuti Li*, Study of InGaN/GaN light emitting diodes with step-graded electron blocking layer, IEEE Photonics Technology Letters, 26,134, 2014
21. Xing Lu, Jun Ma, Huaxing Jiang, Chao Liu, and Kei May Lau*, Low trap states in in-situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition, Applied Physics Letters, 105, 102911, 2014
20. Chao Liu, Zhaojun Liu, Tongde Huang, Jun Ma, and Kei May Lau*, Improved breakdown characteristics of monolithically integrated III-nitride HEMT- LED devices using carbon doping, 17th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE), Lausanne, Switzerland, July 13- 18, 2014
19. Jun Ma, Xing Lu, Huaxing Jiang, Chao Liu, and Kei May Lau*, In situ growth of SiNx as gate dielectric and surface passivation for AlN/GaN heterostructures by metalorganic chemical vapor deposition, Applied Physics Express, 7, 091002, 2014
18. Zhaojun Liu, Tongde Huang, Jun Ma, Chao Liu, and Kei May Lau*, Monolithic Integration of AlGaN/GaN HEMTs on LEDs (HEMT-LEDs) by MOCVD, IEEE Electron Device Letters, 35, 330, 2014
17. Zhaojun Liu, Jun Ma, Tongde Huang, Chao Liu, and Kei May Lau*, Selective epitaxial growth of monolithically integrated GaN-based light-emitting diodes with AlGaN/GaN driving transistors, Applied Physics Letters, 104,091103, 2014 (featured by online magazine "Semiconductor Today" on 21st, Mar, 2014)
16. Jun Ma, Xing Lu, Tongde Huang, Chao Liu, and Kei May Lau*, Improved buffer resistivity for GaN-based HEMTs using a medium-temperature and low-pressure GaN insertion layer, 17th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE), Lausanne, Switzerland, July 13-18, July, 2014
15. Xingfu Wang,Yong Zhang,Xinman Chen,Miao He, Chao Liu, Yian Yin, Xianshao Zou and Shuti Li*, Ultrafast, super high gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire, Nanoscale, 6, 12009, 2014
14. Danwei Li, Jiasheng Diao, Xiangjing Zhuo, Jun Zhang, Xingfu Wang, Chao Liu, Bijun Zhao, Kai Li, Lei Yu, Yuanwen Zhang, Miao He, and Shuti Li*, High quality crack-free GaN film grown on Si (111) substrate without AlN interlayer, Journal of crystal growth, 47, 58, 2014
13. Xingfu Wang, Jinhui Tong, Xin Chen, Bijun Zhao, Zhiwei Ren, Danwei Li, Xiangjing Zhuo, Jun Zhang, Hanxiang Yi, Chao Liu, Fang Fang and Shuti Li*, Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties, Chemical Communications, 50, 682, 2014
12. Zhiwei Ren, Chao Liu, Xin Chen, Bijun Zhao, Xinfu Wang, Jinhui Tong, Jun Zhang, Xiangjing Zhuo, Danwei Li, Hanxiang Yi and Shuti Li*, Enhanced performance of InGaN/GaN based solar cells with an In0.05Ga0.95N ultra-thin inserting layer between GaN barrier and In0.2Ga0.8N well, Optics Express, 21, 7118, 2013
11. Chao Liu, Zhiwei Ren, Xin Chen, Bijun Zhao, Xingfu Wang, Yian Yin, Shuti Li*, Advantage of an InGaN based light emitting diodes with p-InGaN/p- GaN superlattice hole accumulation layer, Chinese Physics B, 22, 058502, 2013
10. Chao Liu, Taiping Lu, Lejuan Wu, Hailong Wang, Yian Yin, Guowei Xiao, Yugang Zhou, and Shuti Li*, Enhanced Performance of Blue Light-Emitting Diodes with InGaN/GaN Superlattice as Hole Gathering Layer, IEEE Photonics Technology Letters, 24, 1239, 2012
9. Jinhui Tong, Shuti Li*, Taiping Lu, Chao Liu, Hailong Wang, Lejuan Wu, Bijun Zhao, Xingfu Wang, and Xin Chen, Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers, Chinese Physics B, 21,118502, 2012
8. Taiping Lu, Shuti Li*, Chao Liu, Kang Zhang, Yiqin Xu, Jinhui Tong, Lejuan Wu, Hailong Wang, Xiaodong Yang, Yian Yin, Guowei Xiao, and Yugang Zhou, Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer, Applied Physics Letters, 100, 141106, 2012
7. Lejuan Wu, Shuti Li*, Chao Liu, Tai-Ping Lu, Guo-Wei Xiao, Yu-Gang Zhou, Yi-An Yin, Simulation study of blue InGaN multiple quantum wells light- emitting diodes withdifferent hole injection layer, Chinese Physics B, 21, 068506, 2012
6. Chao Liu, Taiping Lu, Zhiwei Ren, Xin Chen, Bijun Zhao, Yian Yin, Jinhui Tong, and Shuti Li*, Study of blue InGaN multiple quantum well light- emitting diodes with p-type quantum barriers, Asian Communication and Photonics Conference (ACP), Guangzhou, China, Nov 7-10, 2012
5. Taiping Lu, Shuti Li*, Kang Zhang, Chao Liu, Guowei Xiao, Yugang Zhou, Shu-Wen Zheng, Yi-An Yin, Le-Juan Wu, Hai-Long Wang, and Xiao-Dong Yang, Simulation study of blue InGaN light-emitting diodes with dip-shaped quantum wells, Chinese Physics B, 20, 108504, 2011
4. Taiping Lu, Shuti Li*, Kang Zhang, Chao Liu, Yi-An Yin, Le-Juan Wu, Hai-Long Wang, Xiao-Dong Yang, Guo-Wei Xiao, and Yu-Gang Zhou, Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes, Optics Express, 19,18319, 2011
3. Taiping Lu, Shuti Li*, Kang Zhang, Chao Liu, Guowei Xiao, Yugang Zhou, Shu-Wen Zheng, Yi-An Yin, Le-Juan Wu, Hai-Long Wang, and Xiao-Dong Yang, The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer, Chinese Physics B, 20, 098503, 2011
2. Shuti Li*, Chao Liu, Guo-Guang Ye, Guo-Wei Xiao, Yu-Gang Zhou, Jun Su, Guang-Han Fan, Yong Zhang, Fu-Bo Liang and Shu-Wen Zheng. Study of GaP single crystal layers grown on GaN by MOCVD, Materials Research Bulletin, 46,1942, 2011
1. Shuti Li*, Jun Su, Guanghan Fan, Chao Liu, Jian-Xing Cao, Yi-An Yin, GaP: Mg layers grown on GaN by MOCVD, Journal of Crystal Growth, 312,3101, 2010
Wide bandgap semicondutors
GaN/AlN vertical power devices
GaN Micro/Mini LEDs
GaN deep UV/Yellow LEDs
Monolithic GaN device integration
on-chip optical communication
MOCVD epitaxy
Yuchuan Ma Ph.D student, from 2021 to 2026 Research interest：GaN power devices Email：yuchuan.ma@mail.sdu.edu.cn |
Shuhui Zhang Ph.D student, from 2022 to 2026 Research interest：GaN power devices |
Yipin Gao Ph.D student from 2022 to 2027 Research interest：Monolithic device integration Email：yipin.gao@mail.sdu.edu.cn |
Changfa Sun Ph.D student from 2023 to 2028 |
Nan Gao Ph.D student, from 2022 to 2026 Research interest：GaN epitaxy |
Zenyin Dong Ph.D student, from 2023 to 2027 Research interest：Ga2O3 epitaxy |
Ph.D. student, from 2023 to 2028 Research interest：GaN power devices |
Jianfan Li Ph.D student from 2025 to 2030 |
Xiaoping Meng Master student from 2023 to 2026 |
Jiali Zhang Master student from 2023 to 2026 |
Ziwei Wang Master student from 2024 to 2027 |
Xiangze Kong Master student from 2024 to 2027 |
Chuyao Yan Master student from 2024 to 2027 |
Weizhi Sun Master student from 2024 to 2027 |
Jiangwei Zhang Master student from 2024 to 2027 |
Yan Zang Master student from 2025 to 2028 |
Master student from 2025 to 2028 |
Xiaoshan Zhang Master student from 2025 to 2028 |
Master student from 2025 to 2028 |
Jiayi Gao Master student from 2025 to 2028 |
Research assistant |
Yiming Wang Research assistant |
Sihao Chen Master student from 2019 to 2022 Placement: Ph.D student at Peking U |
Heng Wang Master student from 2020 to 2023 Placement: Ph.D student at HKUST |
Mengran Liu Master student from 2020 to 2023 Placement: Ph.D student at Peking U |
Xuyang Liu Master student from 2020 to 2023 Placement: Ph.D student at Fudan U |
Jian Yin Master student from 2020 to 2023 Placement: Fudan Microelectronics |
Research Assistant from 2020 to 2023 Placement: Ph.D student at Zhejiang U |
Research Assistant from 2020 to 2023 Current position: Ph.D student at CAS |
Hongjie Shao Master student from 2021 to 2024 Research interest：GaN power devices Placement: Ph.D student at HKUST |
Juan Cai Master student from 2021 to 2024 Research interest：Ga2O3 power devices Placement: Yangtze Memory Technology Corp |
Wentao Tian Master student from 2021 to 2024 Research interest：GaN LED Placement: AMLogic |
Xiangyu Teng Master student from 2022 to 2025 Research interest：GaN power devices Placement: Ph.D student at HKUST |
Master student from 2022 to 2025 Research interest：GaN power devices Placement: BYD Semiconductor |
Master student from 2022 to 2025 Research interest：GaN LED Placement: BYD Semiconductor |
Master student from 2022 to 2025 Research interest：GaN power devices Placement: Changxin Memory Technology |
Yanting Zhang Master student from 2022 to 2025 Research interest：GaN power systems Placement: Shanghai GTX Semiconductor |
Yizheng Tang Research assistant from 2022 to 2025 Placement: Columbia University |
Ph.D student, 2020 Research interest：GaN power devices Placement: Assistant professor at NJUPT |
Basic Electronics, for bachelor students, Fall Semester
Compound Semiconductor Materials and Devices, for graduate students, Spring Semester
Semiconductor Device Physics, for bachelor students
Introduction to the frontier technology of microelectronics, for bachelor students
We are always looking for highly motivated master/PhD students, and Postdocs to work on III-Nitride semiconductors for power electronics and smart lighting applications.
The successful candidate will join the laboratory of Professor Chao Liu, and will focus on some of the following topics: MOCVD growth, simulation, cleanroom fabrication and characterization of III-Nitride materials and devices.
The candidate will have the opportunity of doing high-level research in a top-ranked engineering school, working closely with the professor as well as getting experience in building a laboratory and leading students.
