Vertical GaN-on-Si MOSFETs with Monolithically Integrated Freewheeling Schottky Barrier Diodes
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发表刊物：IEEE Electron Device Letters
关键字：Gallium nitride, vertical, quasi-vertical transistors, GaN-on-Si, power, semiconductor, MOSFETs, freewheeling, SBDs, diodes
摘要：We demonstrate for the first time the monolithic integration of vertical GaN MOSFETs with freewheeling Schottky barrier diodes (SBD), based on a 6.7-μm-thick n-p-n heterostructure grown on 6-inch silicon substrates by metal organic chemical vapor deposition. The anode of the SBD is integrated in the source pad of the MOSFET and the cathode is directly connected to the MOSFET drain through the bottom n+-GaN layer, eliminating the need of any metal wire interconnection. This monolithic integration scheme offers reduced footprint, minimized parasitic components and
simplified packaging. The integrated MOSFET-SBD showed enhancement-mode operation with a threshold voltage of 3.9 V, an on/off ratio of over 108 and a dramatic improvement in reverse conduction, without degradation in on-state performance from the integration of the SBD. The integrated GaN-on-Si vertical SBD exhibited excellent performance, with a specific on-resistance of 1.6 mΩ·cm2, a turn-on voltage of 0.76 V, an ideality factor of 1.5, along with a breakdown voltage of 254 V. These results reveal the promising potential of emerging GaN vertical devices for future power converters.
全部作者：Riyaz Abdul Khadar
论文类型：期刊论文
通讯作者：Chao Liu,Elison Matioli
卷号：39
页面范围：1034
是否译文：否
发表时间：2018-08-01
收录刊物：SCI
发表时间：2018-08-01
附件：C. Liu et al. VMOSFET+SBD.pdf 下载[] 次