Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects
发布时间:2022-12-26
点击次数:
- 发表刊物:
- Compound Semiconductor Week (CSW), Toyama, Japan, Jun 26-30
- 全部作者:
- Yuefei Cai,Huaxing Jiang
- 第一作者:
- Chao Liu
- 通讯作者:
- Kei May Lau
- 是否译文:
- 否
- 发表时间:
- 2016-06-01