Effective suppression of Current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation

发布时间:2022-12-26
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发表刊物:
International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH), Miami, Florida, USA, May 16-19
全部作者:
Xing Lu,Chao Liu
第一作者:
Huaxing Jiang
通讯作者:
Kei May Lau
是否译文:
发表时间:
2016-05-01