教授
博士生导师
硕士生导师
性别:男
毕业院校:香港科技大学
学位:博士
在职信息:在职
所在单位:集成电路学院
入职时间:2019-04-26
学科:微电子学与固体电子学
办公地点:山东大学软件园校区3-B栋302室
电子邮箱:chao.liu@sdu.edu.cn
访问量:
最后更新时间:..
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[1]
Ying Qi , Wentao Tian , Mengran Liu , Shuti Li and Chao Liu.
Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Engineered p-AlGaN Hole Supplier Layer.
IEEE Transactions on Electron Devices,
2024.
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[2]
Hongjie Shao , Yongchen Ji , Xuyang Liu , Heng Wang and Chao Liu.
Design strategy and working principle of GaN vertical trench gate MOSFETs with p-type shielding rings.
Japanese Journal of Applied Physics,
2024.
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[3]
Hang Chen , Sihao Chen , Heng Wang , Man Hoi Wong and Chao Liu.
Design Strategy of Vertical GaN Power SBDs with p-GaN JTE and Experimental Demonstration of Selective p-Doping by Implantation.
Physica Status Solidi A: Applications and Materials Science,
2024.
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[4]
Wentao Tian , Mengran Liu , Shuti Li and Chao Liu.
Improved hole injection efficiency in AlGaN DUV LEDs with minimized band offset at the p-EBL/hole supplier interface.
14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov. 12-17,
2023.
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[5]
Yuchuan Ma , Heng Wang , Sihao Chen and Chao Liu.
1.2 kV-class Vertical GaN Power MOSFETs with Monolithically Integrated Freewheeling Merged P-i-N Schottky Diodes.
14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov. 12-17,
2023.
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[6]
Hongjie Shao , Yongchen Ji , Xuyang Liu and Chao Liu.
GaN Vertical Trench Gate Power MOSFET with embedded p-type shielding rings beneath the gate trench.
14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov. 12-17,
2023.
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[7]
Heng Zhou , Yuanjie Lv , Chao Liu , Ming Yang , Zhaojun Lin , Yang Liu and Mingyan Wang.
Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors.
Solid-State Electronics,
212,
108833,
2023.
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[8]
Wentao Tian , Mengran Liu , Shuti Li and Chao Liu.
Enhanced hole injection in Ga-polar 290 nm AlGaN-based DUV LEDs with a p-n junction hole accelerator.
Optical Materials Express,
2023.
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[9]
Mingyan Wang , Yuanjie Lv , Heng Zhou , Peng Cui , Chao Liu and Zhaojun Lin.
Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT.
IEEE Electron Device Letters,
2023.
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[10]
Mingyan Wang , Yuanjie Lv , Heng Zhou , Zuokai Wen , Peng Cui , Chao Liu and Zhaojun Lin.
A Hybrid Simulation Technique To Investigate Bias-dependent Electron Transport And Self-Heating In AlGaN/GaN HFETs.
IEEE Transactions on Electron Devices,
2023.
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[11]
Mengran Liu , Wentao Tian and Chao Liu.
Simultaneously improved hole injection and current uniformity in AlGaN-based deep ultraviolet light-emitting diodes.
Optical Materials Express,
13,
2405,
2023.
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[12]
Wentao Tian , Mengran Liu , Shuti Li and Chao Liu.
Improving the hole injection efficiency in AlGaN DUV LEDs by minimizing the band offset at the p-EBL/hole supplier interface.
Optical Materials Express,
13,
2449,
2023.
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[13]
Sheng Lin , Tingjun Lin , Wenliang Wang , Chao Liu and Yao Ding.
High Performance GaN-Based Ultraviolet Photodetector via Te/Metal Electrodes.
Materials,
16,
4569,
2023.
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[14]
Xuyang Liu , Yingbin Qiu and Chao Liu.
Analytical Model and Design Strategy for GaN Vertical Schottky Diodes with embedded monolayer and multilayer floating islands.
Compound Semiconductor Week, Jeju, Korea, May 29-June 2,
2023.
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[15]
Xuyang Liu , Sihao Chen , Hang Chen , Yingbin Qiu and Chao Liu.
Analytical Model and Design Strategy for GaN Vertical Floating Island Schottky Diodes.
IEEE Transactions on Electron Devices,
69,
3079,
2022.
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[16]
Heng Wang , Sihao Chen , Hang Chen and Chao Liu.
Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes towards Alleviated Electric Field Crowding and Efficient Carrier Injection.
IEEE Journal of the Electron Devices Society,
10,
504,
2022.
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[17]
Mengran Liu and Chao Liu.
Enhanced Carrier Injection in AlGaN-based Deep Ultraviolet Light-emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface.
IEEE Photonics Journal,
2022.
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[18]
Yongchen Ji , Mengran Liu and Chao Liu.
Alleviated built-in electric field in the active region of AlGaN deep-ultraviolet light emitting diodes with locally embedded p-i-n junctions.
Applied Optics,
61,
2022.
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[19]
Congcong Deng , Fei Chen , Chao Liu , Qing Liu , Kai Chen , Can Zou , Zixuan Zhao , Yu Zhu , Xingfu Wang , Fangliang Gao and Shuti Li.
Realization of specific localized surface plasmon resonance in Au-modified Ni nanoplasmonics for efficient detection.
Applied Surface Science,
586,
152288,
2022.
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[20]
Jian Yin , Sihao Chen , Hang Chen , Shuti Li , Houqiang Fu and Chao Liu.
Design space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling.
Electronics,
11,
1972,
2022.
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