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The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation

Release time:2019-10-24|Hits:

Affiliation of Author(s):微电子学院

Journal:Applied Physics A-Materials Science & Processing

All the Authors:刘欢,Cheng Aijie

First Author:付晨

Indexed by:综合研究

Correspondence Author:linzhaojun

Document Code:F32AD635A7794EE79E6E6951FD576DD1

Volume:124

Issue:4

Translation or Not:no

Date of Publication:2018-04-01

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Effect of defects on adsorption characteristics of AlN monolayer towards SO2 and NO2: Ab initio exposure
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Screening study of light-metal and transition-metal-doped NiTiH hydrides as Li-ion battery anode materials

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