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The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation
Release Time:2019-10-24
  • Institution:
    集成电路学院
  • Journal:
    Applied Physics A-Materials Science & Processing
  • First Author:
    付晨
  • Correspondence Author:
    林兆军
  • All the Authors:
    刘欢,程爱杰
  • Document Code:
    F32AD635A7794EE79E6E6951FD576DD1
  • Volume:
    124
  • Issue:
    4
  • Translation or Not:
    No
  • Date of Publication:
    2018-04
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