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Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
Release Time:2019-10-25
  • Institution:
    微电子学院
  • Journal:
    scientific reports
  • First Author:
    崔鹏
  • Correspondence Author:
    林兆军
  • All the Authors:
    刘欢,程爱杰
  • Document Code:
    F2AA78930D604001BBE2CDBB7272ED00
  • Volume:
    8
  • Translation or Not:
    No
  • Date of Publication:
    2018-06
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