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Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Release time:2019-10-25|Hits:

Affiliation of Author(s):微电子学院

Journal:scientific reports

All the Authors:刘欢,Cheng Aijie

First Author:崔鹏

Indexed by:综合研究

Correspondence Author:linzhaojun

Document Code:F2AA78930D604001BBE2CDBB7272ED00

Volume:8

Translation or Not:no

Date of Publication:2018-06-01

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A Fast Finite Difference Method for Three-Dimensional Time-Dependent Space-Fractional Diffusion Equations with Fractional Derivative Boundary Conditions

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