Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors

Release time:2020-06-02|Hits:

Affiliation of Author(s):微电子学院

Journal:Physica E: Low-dimensional Systems and Nanostructures

All the Authors:刘欢,Cheng Aijie

First Author:崔鹏

Indexed by:研究与发展成果应用

Correspondence Author:linzhaojun

Document Code:A74EBB06AB1A4AB4A095305DE2E9583B

Translation or Not:no

Date of Publication:2020-02-01