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Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors
Release Time:2020-06-02
  • Institution:
    微电子学院
  • Journal:
    Physica E: Low-dimensional Systems and Nanostructures
  • First Author:
    崔鹏
  • Correspondence Author:
    林兆军
  • All the Authors:
    刘欢,程爱杰
  • Document Code:
    A74EBB06AB1A4AB4A095305DE2E9583B
  • Translation or Not:
    No
  • Date of Publication:
    2020-02
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