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A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
Release Time:2021-12-09
  • Institution:
    集成电路学院
  • Journal:
    Scientific Reports
  • First Author:
    刘阳
  • Document Code:
    9E5379E96DF4444ABA017B4CD9E0DCD7
  • Volume:
    11
  • Issue:
    1
  • Translation or Not:
    No
  • Date of Publication:
    2021-11
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