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A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology

Release time:2021-12-09|Hits:

Affiliation of Author(s):微电子学院

Journal:SCIENTIFIC REPORTS

First Author:刘阳

Indexed by:Unit Twenty Basic Research

Document Code:9E5379E96DF4444ABA017B4CD9E0DCD7

Volume:11

Issue:1

Translation or Not:no

Date of Publication:2021-11-17

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