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The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage

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Affiliation of Author(s):物理学院

Journal:Advanced Electronic Materials

First Author:任雪

Document Code:368AFF98D28E49838BFEC7DDA3610BB6

Volume:10

Issue:5

Page Number:2300752

Number of Words:6

Translation or Not:no

Date of Publication:2024-03-18

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