ysQgkLVj34m1okio4kesPOqUH3mRgpdHQg12prPbIXBYvOhvnCZ2p9wDBY9H
Current position: Home >> Scientific Research >> Paper Publications

Detailed characteristics of expansion velocity of Si from laser ablated SiC

Hits:

Institution:物理学院

Title of Paper:Detailed characteristics of expansion velocity of Si from laser ablated SiC

Journal:chinese physics letters

First Author:刘向东

All the Authors:陈明

Document Code:lw-87969

Volume:25

Issue:5

Page Number:1768

Translation or Not:No

Date of Publication:2008-05

Release Time:2019-10-24

Prev One:Temporal and spatial evolution of Si atoms in plasmas produced by a nanosecond laser ablating silicon carbide crystals

Next One:Enhanced Raman Scattering of CuPc Films on Imperfect WSe2 Monolayer Correlated to Exciton and Charge-Transfer Resonances