Title:磁性增强的H掺杂MNXGE1-X磁性半导体薄膜
Institution:物理学院
Type of Patent:Invent
Application Number:200810014729.9
Number of Inventors:4
Service Invention or Not:No
Application Date:2008-03-07
Publication Date:2010-06-09
Authorization Date:2010-06-09
Release Time:2019-04-16