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Paper Publications
The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage
2024-03-18 Hits:
Affiliation of Author(s):物理学院
Journal:Advanced Electronic Materials
First Author:任雪
Document Code:368AFF98D28E49838BFEC7DDA3610BB6
Volume:10
Issue:5
Page Number:2300752
Number of Words:6
Translation or Not:no
Date of Publication:2024-03-18
Date of Publication:2024-03-18
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