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Title:一种高等静压下生长有机-无机复合半导体晶体的方法
Institution:晶体材料研究所
Type of Patent:发明
Application Number:2015103817076
Number of Inventors:16
Service Invention or Not:No
Application Date:2015-07-01
Publication Date:2017-07-11
Authorization Date:2015-07-01
Release Time:2018-12-06