Title:Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
others
Title of Award : Interface Schottky barrier engineering via strain in metal-semiconductor composites.
Hits :
Institution:物理学院
Title of Paper:Interface Schottky barrier engineering via strain in metal-semiconductor composites.
Journal:NANOSCALE
First Author:Dai Ying
All the Authors:俞琳,Huang Baibiao
Document Code:lw-173779
Volume:8
Page Number:1352
Translation or Not:No
Date of Publication:2016-01
Release Time:2019-04-14
Prev One:Ab Initio Prediction and Characterization of Mo2C Monolayer as Anodes for Lithium-Ion and Sodium-Ion Batteries
Next One:Insights into How Fluorine-Adsorption and n-Type Doping Affect the Relative Stability of the (001) and (101) Surfaces of TiO2: Enhancing the Exposure of More Active but Thermodynamically Less Stable (001)