Title : Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation

Hits :

Affiliation of Author(s):物理学院

Title of Paper:Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation

Journal:Science and Technology of Advanced Materials

First Author:Dai Ying

Indexed by:Unit Twenty Basic Research

Document Code:lw-91530

Volume:9

Issue:2

Page Number:025014

Translation or Not:no

Date of Publication:2008-06-01