Title : Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation

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Affiliation of Author(s):物理学院

Title of Paper:Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation

Journal:Science and Technology of Advanced Materials

All the Authors:Dai Ying

First Author:Dai Ying

Document Code:lw-91530

Volume:9

Issue:2

Page Number:025014

Number of Words:4

Translation or Not:no

Date of Publication:2008-06-01