Centre for Integration Strategies in Large Area Electronics
中文 MOBILE Version

Study on characteristics and physical model of IGZO vertical channel device

  • Supported by:National Key Technologies R&D Program
  • Date of Project Completion:2025-10-01
  • Date of Project Initiation:2022-11-01
Pre One:国家重点研发计划“垂直沟道铟镓锌氧场效应晶体管动态随机存储器（DRAM）技术研究”

Next One:Research on novel IGZO vertical channel device and 3D stacked DRAM unit
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