Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation, Applied Physics Letters 109, 2016，通讯作者.
发布时间：2024-11-08
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- 论文名称：
- Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation, Applied Physics Letters 109, 2016，通讯作者.
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- 发布时间：
- 2024-11-08