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Enhanced bandwidth of a lateral-pin Ge/Si avalanche photodiode using inductive gain peaking
Affiliation of Author(s):信息科学与工程学院
Journal:Optics and Laser Technology
First Author:王一铭
Document Code:A35EFF714A4C48AEA9B5D2B5961F949C
Issue:1
Translation or Not:no
Date of Publication:2024-04-01