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Complementary Optoelectronic Interaction of n+-Si/p-Ge Heterojunctions Fabricated via Transfer Printing Towards Broadband Photodetectors
Affiliation of Author(s):集成电路学院
Journal:Applied Physics Letters
First Author:林平岭
Document Code:4FD1B8A6AF074BE7A444ACAA23B40501
Issue:162103
Number of Words:4
Translation or Not:no
Date of Publication:2024-04-17