Title:一种外延层非均匀分布的碳化硅SBD器件及其制作方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202410584864.6
Number of Inventors:4
Service Invention or Not:No
Application Date:2024-05-13
Publication Date:2024-08-06
Authorization Date:2024-08-06
Release Time:2024-10-16
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
