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基于n-型有机半导体晶体表面台阶缺陷的修复方法及应用
Release Time:2021-11-12| Hits:
Title:基于n-型有机半导体晶体表面台阶缺陷的修复方法及应用
Institution:晶体材料研究院（晶体材料全国重点实验室）
Type of Patent:Invent
Application Number:202010377063.4
Number of Inventors:1
Service Invention or Not:No
Application Date:2020-05-07
Publication Date:2021-11-19
Authorization Date:2021-11-19
Release Time:2021-11-12
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