中文

Origin of d(0) magnetism in II-VI and III-V semiconductors by substitutional doping at anion site

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  • Affiliation of Author(s):物理学院

  • Journal:Physical review B

  • All the Authors:Huang Baibiao

  • First Author:Dai Ying

  • Indexed by:Unit Twenty Basic Research

  • Document Code:lw-105144

  • Volume:81

  • Issue:12

  • Page Number:125211

  • Translation or Not:no

  • Date of Publication:2010-04-07

  • Date of Publication:2010-04-07

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