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    Engineering Gapless Edge States from Antiferromagnetic Chern Homobilayer

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    • Institution:物理学院

    • Title of Paper:Engineering Gapless Edge States from Antiferromagnetic Chern Homobilayer

    • Journal:Nano Letters

    • First Author:邹晓蓉

    • Document Code:1737392874987429889

    • Volume:24

    • Issue:1

    • Page Number:450-457

    • Number of Words:5

    • Translation or Not:No

    • Date of Publication:2023-12

    • Release Time:2025-01-14
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