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一种内延生长[100]取向TaON自支撑薄膜的制备方法

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  • Affilication of Author(s):晶体材料研究所

  • Patent Applicant:qinxiaoyan,wangzeyan,zhangxiaoyang,wangpeng,liuyuanyuan,Huang Baibiao

  • Type of Patent:发明

  • Application Number:201810146344.1

  • Number of Inventors:7

  • Service Invention or Not:no

  • Application Date:2018-02-12

  • Publication Date:2019-07-23

  • Authorization Date:2019-07-23

  • Publication Date:2019-07-23

  • Application Date:2018-02-12

  • Authorization Date:2019-07-23
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