Two-step growth method of graphene on silicon carbide for Hall effect sensors: decoupling buffer layer formation from graphene growth
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Institution:新一代半导体材料研究院
Title of Paper:Two-step growth method of graphene on silicon carbide for Hall effect sensors: decoupling buffer layer formation from graphene growth
Journal:中国化学会第一届全国表界面科学会议
First Author:姜晓呈
Document Code:85D2FBA3785F4AC7BA517874DD242EFF
Number of Words:1
Translation or Not:No
Date of Publication:2025-05
Release Time:2025-05-24