山东大学教师主页胡季帆 The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage 中文主页

The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage: 发布时间：2024-05-17 | 点击次数：

所属单位：物理学院

发表刊物：Advanced Electronic Materials

第一作者：任雪

论文编号：368AFF98D28E49838BFEC7DDA3610BB6

卷号：10

期号：5

页面范围：2300752

字数：6

是否译文：否

发表时间：2024-03

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