fywK6Et3XX3LB6K04RxtVadcVCJcu3JvlWHbj5QdCCCJmN2vHgz9aGDUIBh7
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Diode-pumped Passively Q-switched Nd:GGG Laser with a Bi–doped GaAs Semiconductor Saturable Absorber

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Institution:信息科学与工程学院

Title of Paper:Diode-pumped Passively Q-switched Nd:GGG Laser with a Bi–doped GaAs Semiconductor Saturable Absorber

Journal:Optics communications

First Author:李德春

All the Authors:赵圣之,李桂秋,杨克建,李德春

Document Code:lw-165996

Volume:332

Page Number:292

Translation or Not:No

Date of Publication:2014-07

Release Time:2019-10-24

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