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Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT Study

Release time:2025-05-27
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Affiliation of Author(s):
集成电路学院
Journal:
NANOMATERIALS
First Author:
张文恺
Document Code:
28B1FF1AC4CF4EF39D2FC55CF1D255B1
Issue:
15
Number of Words:
40
Translation or Not:
no
Date of Publication:
2025-05-10