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Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage

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  • Affiliation of Author(s):晶体材料研究院

  • Journal:J. Mater. Chem. A.

  • First Author:吕松阳

  • Document Code:6A324EE074934A8B9C390E71EE25AEFC

  • Issue:41

  • Page Number:22007

  • Translation or Not:no

  • Date of Publication:2022-10-25

  • Date of Publication:2022-10-25
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